Exciton/free-carrier plasma in GaN-based quantum wells: scattering and screening

M. E. Portnoi; I. Galbraith

doi:10.1002/1521-396X(200101)183:1<87::AID-PSSA87>3.0.CO;2-O

Exciton/free-carrier plasma in GaN-based quantum wells: scattering and screening

M. E. Portnoi, I. Galbraith

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

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Abstract

The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory is applied to exciton/free-carrier plasma in GaN-based quantum wells at room temperature.

Original language	English
Pages (from-to)	87-90
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	183
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200101)183:1<87::AID-PSSA87>3.0.CO;2-O
Publication status	Published - Jan 2001

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10.1002/1521-396X(200101)183:1<87::AID-PSSA87>3.0.CO;2-O

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title = "Exciton/free-carrier plasma in GaN-based quantum wells: scattering and screening",

abstract = "The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory is applied to exciton/free-carrier plasma in GaN-based quantum wells at room temperature.",

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AB - The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory is applied to exciton/free-carrier plasma in GaN-based quantum wells at room temperature.

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Exciton/free-carrier plasma in GaN-based quantum wells: scattering and screening

Abstract

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