Exciton/free-carrier plasma in GaN-based quantum wells: scattering and screening

M. E. Portnoi, I. Galbraith

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory is applied to exciton/free-carrier plasma in GaN-based quantum wells at room temperature.

Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume183
Issue number1
DOIs
Publication statusPublished - Jan 2001

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