Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff

A. Curran; J. K. Morrod; K. A. Prior; A. K. Kar; R. J. Warburton

doi:10.1088/0268-1242/22/11/001

Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff

A. Curran, J. K. Morrod, K. A. Prior, A. K. Kar, R. J. Warburton

School of Engineering & Physical Sciences

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20 Citations (Scopus)

Abstract

We report the observation of strong exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn_0.9Cd_0.1Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO ₂/Ta₂O₅ mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle-resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of 23.6 meV at 20 K, composite evolution of the lower and upper polaritons and narrowing of the lower polariton linewidth near resonance. The heavy-hole exciton oscillator strength per quantum well is also deduced to be 1.78 × 10¹³ cm^-2. © 2007 IOP Publishing Ltd.

Original language	English
Pages (from-to)	1189-1192
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	22
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/22/11/001
Publication status	Published - 1 Nov 2007

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title = "Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff",

abstract = "We report the observation of strong exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn0.9Cd0.1Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO 2/Ta2O5 mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle-resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of 23.6 meV at 20 K, composite evolution of the lower and upper polaritons and narrowing of the lower polariton linewidth near resonance. The heavy-hole exciton oscillator strength per quantum well is also deduced to be 1.78 × 1013 cm-2. {\textcopyright} 2007 IOP Publishing Ltd.",

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T1 - Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff

AU - Curran, A.

AU - Morrod, J. K.

AU - Prior, K. A.

AU - Kar, A. K.

AU - Warburton, R. J.

PY - 2007/11/1

Y1 - 2007/11/1

N2 - We report the observation of strong exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn0.9Cd0.1Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO 2/Ta2O5 mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle-resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of 23.6 meV at 20 K, composite evolution of the lower and upper polaritons and narrowing of the lower polariton linewidth near resonance. The heavy-hole exciton oscillator strength per quantum well is also deduced to be 1.78 × 1013 cm-2. © 2007 IOP Publishing Ltd.

AB - We report the observation of strong exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn0.9Cd0.1Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO 2/Ta2O5 mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle-resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of 23.6 meV at 20 K, composite evolution of the lower and upper polaritons and narrowing of the lower polariton linewidth near resonance. The heavy-hole exciton oscillator strength per quantum well is also deduced to be 1.78 × 1013 cm-2. © 2007 IOP Publishing Ltd.

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U2 - 10.1088/0268-1242/22/11/001

DO - 10.1088/0268-1242/22/11/001

M3 - Article

SN - 0268-1242

VL - 22

SP - 1189

EP - 1192

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

ER -

Exciton-photon coupling in a ZnSe-based microcavity fabricated using epitaxial liftoff

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