Exciton photoluminescence of CsPbBr3@SiO2 quantum dots and its application as a phosphor material in light-emitting devices

Canran Zhang, Hongxiang Zhang, Ru Wang, Daotong You, Wei Wang, Chunxiang Xu, Jun Dai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this report, we mainly investigate the optical property differences between CsPbBr3@SiO2 quantum dots (QDs) and CsPbBr3 QDs. The photoluminescence demonstrates that CsPbBr3@SiO2 QDs and CsPbBr3 QDs have similar exciton binding energy. Both CsPbBr3 and CsPbBr3@SiO2 QDs present optical bandgaps and photoluminescence (PL) linewidth broadening as the temperature increases from 10 K to room temperature, which is attributed to the thermal expansion and electron-phonon coupling. The fitting results show that CsPbBr3 and CsPbBr3@SiO2 QDs have the similar bandgap thermal expansion coefficient, but the CsPbBr3@SiO2 QDs have weaker electron-phonon interaction. Temperature-dependent timeresolved photoluminescence (TRPL) demonstrates that the PL lifetime increases with the temperature and CsPbBr3@SiO2 QDs have longer PL lifetime than CsPbBr3 QDs after 110 K. In addition, the CsPbBr3@SiO2 QDs integrated on the blue light-emitting diode chip as green phosphor material show better thermal stability in ambient air.

Original languageEnglish
Pages (from-to)1007-1017
Number of pages11
JournalOptical Materials Express
Volume10
Issue number4
Early online date18 Mar 2020
DOIs
Publication statusPublished - 1 Apr 2020

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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