Exciton fine structure splitting of single InGaAs self-assembled quantum dots

A. Högele, B. Alèn, F. Bickel, R. J. Warburton, P. M. Petroff, K. Karrai

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We show how the resonant absorption of the ground state neutral exciton confined in a single InGaAs self-assembled quantum dot can be directly observed in an optical transmission experiment. A spectrum of the differential transmitted intensity is obtained by sweeping the exciton energy into resonance with laser photons exploiting the voltage induced Stark-shift. We describe the details of this experimental technique and some example results which exploit the ~1 µeV spectral resolution. In addition to the fine structure splitting of the neutral exciton and an upper bound on the homogeneous linewidth at 4.2 K, we also determine the transition electric dipole moment. © 2003 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)175-179
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
Publication statusPublished - Mar 2004
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 14 Jul 200318 Jul 2003

Keywords

  • Absorption
  • Fine structure splitting
  • Homogeneous linewidth
  • Quantum dots

Fingerprint Dive into the research topics of 'Exciton fine structure splitting of single InGaAs self-assembled quantum dots'. Together they form a unique fingerprint.

  • Cite this