Exciton-acoustic-phonon scattering in (Zn,Cd)Se/ZnSe quantum wells - the influence of quantum confinement

A. Tookey, G. Brown, B. Voegele, D. Bain, I. J. Blewett, A. K. Kar, I. Galbraith, K. A. Prior, B. C. Cavenett, B. S. Wherrett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To study the influence of quantum confinement on exciton-acoustic-phonon scattering, seven (Zn,Cd)Se/ZnSe samples were grown by molecular beam epitaxy onto GaAs substrates. The specimens had 20 wells of nominal widths - 10, 15, 20, 30, 40, and 60 angstroms. Exciton-resonant, femtosecond time-integrated four-wave mixing was carried out on each sample at five temperatures between 4 and 70 K and five excitation densities between 0.5 and 2.5×109 cm-2. The maximum of both the exciton-acoustic-phonon scattering parameter and the exciton binding energy occurred at a similar well width. This indicates that the exciton-acoustic-phonon scattering rate is directly correlated to the degree of quantum confinement.

Original languageEnglish
Title of host publicationProceedings of the 1996 European Quantum Electronics Conference
Pages102-103
Number of pages2
Publication statusPublished - 1998
Event1998 International Quantum Electronics Conference - San Francisco, CA, USA
Duration: 3 May 19988 May 1998

Conference

Conference1998 International Quantum Electronics Conference
CitySan Francisco, CA, USA
Period3/05/988/05/98

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