Exciton-acoustic-phonon scattering in (Zn,Cd)Se/ZnSe quantum wells - the influence of quantum confinement

A. Tookey; G. Brown; B. Voegele; D. Bain; I. J. Blewett; A. K. Kar; I. Galbraith; K. A. Prior; B. C. Cavenett; B. S. Wherrett

Exciton-acoustic-phonon scattering in (Zn,Cd)Se/ZnSe quantum wells - the influence of quantum confinement

A. Tookey, G. Brown, B. Voegele, D. Bain, I. J. Blewett, A. K. Kar, I. Galbraith, K. A. Prior, B. C. Cavenett, B. S. Wherrett

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

To study the influence of quantum confinement on exciton-acoustic-phonon scattering, seven (Zn,Cd)Se/ZnSe samples were grown by molecular beam epitaxy onto GaAs substrates. The specimens had 20 wells of nominal widths - 10, 15, 20, 30, 40, and 60 angstroms. Exciton-resonant, femtosecond time-integrated four-wave mixing was carried out on each sample at five temperatures between 4 and 70 K and five excitation densities between 0.5 and 2.5×10⁹ cm^-2. The maximum of both the exciton-acoustic-phonon scattering parameter and the exciton binding energy occurred at a similar well width. This indicates that the exciton-acoustic-phonon scattering rate is directly correlated to the degree of quantum confinement.

Original language	English
Title of host publication	Proceedings of the 1996 European Quantum Electronics Conference
Pages	102-103
Number of pages	2
Publication status	Published - 1998
Event	1998 International Quantum Electronics Conference - San Francisco, CA, USA Duration: 3 May 1998 → 8 May 1998

Conference

Conference	1998 International Quantum Electronics Conference
City	San Francisco, CA, USA
Period	3/05/98 → 8/05/98

Cite this

@inproceedings{2cdfc8d28ee946c6a16dd7bba339badf,

title = "Exciton-acoustic-phonon scattering in (Zn,Cd)Se/ZnSe quantum wells - the influence of quantum confinement",

abstract = "To study the influence of quantum confinement on exciton-acoustic-phonon scattering, seven (Zn,Cd)Se/ZnSe samples were grown by molecular beam epitaxy onto GaAs substrates. The specimens had 20 wells of nominal widths - 10, 15, 20, 30, 40, and 60 angstroms. Exciton-resonant, femtosecond time-integrated four-wave mixing was carried out on each sample at five temperatures between 4 and 70 K and five excitation densities between 0.5 and 2.5×109 cm-2. The maximum of both the exciton-acoustic-phonon scattering parameter and the exciton binding energy occurred at a similar well width. This indicates that the exciton-acoustic-phonon scattering rate is directly correlated to the degree of quantum confinement.",

author = "A. Tookey and G. Brown and B. Voegele and D. Bain and Blewett, {I. J.} and Kar, {A. K.} and I. Galbraith and Prior, {K. A.} and Cavenett, {B. C.} and Wherrett, {B. S.}",

year = "1998",

language = "English",

pages = "102--103",

booktitle = "Proceedings of the 1996 European Quantum Electronics Conference",

note = "1998 International Quantum Electronics Conference ; Conference date: 03-05-1998 Through 08-05-1998",

}

Tookey, A, Brown, G, Voegele, B, Bain, D, Blewett, IJ, Kar, AK, Galbraith, I, Prior, KA, Cavenett, BC & Wherrett, BS 1998, Exciton-acoustic-phonon scattering in (Zn,Cd)Se/ZnSe quantum wells - the influence of quantum confinement. in Proceedings of the 1996 European Quantum Electronics Conference. pp. 102-103, 1998 International Quantum Electronics Conference, San Francisco, CA, USA, 3/05/98.

TY - GEN

T1 - Exciton-acoustic-phonon scattering in (Zn,Cd)Se/ZnSe quantum wells - the influence of quantum confinement

AU - Tookey, A.

AU - Brown, G.

AU - Voegele, B.

AU - Bain, D.

AU - Blewett, I. J.

AU - Kar, A. K.

AU - Galbraith, I.

AU - Prior, K. A.

AU - Cavenett, B. C.

AU - Wherrett, B. S.

PY - 1998

Y1 - 1998

N2 - To study the influence of quantum confinement on exciton-acoustic-phonon scattering, seven (Zn,Cd)Se/ZnSe samples were grown by molecular beam epitaxy onto GaAs substrates. The specimens had 20 wells of nominal widths - 10, 15, 20, 30, 40, and 60 angstroms. Exciton-resonant, femtosecond time-integrated four-wave mixing was carried out on each sample at five temperatures between 4 and 70 K and five excitation densities between 0.5 and 2.5×109 cm-2. The maximum of both the exciton-acoustic-phonon scattering parameter and the exciton binding energy occurred at a similar well width. This indicates that the exciton-acoustic-phonon scattering rate is directly correlated to the degree of quantum confinement.

AB - To study the influence of quantum confinement on exciton-acoustic-phonon scattering, seven (Zn,Cd)Se/ZnSe samples were grown by molecular beam epitaxy onto GaAs substrates. The specimens had 20 wells of nominal widths - 10, 15, 20, 30, 40, and 60 angstroms. Exciton-resonant, femtosecond time-integrated four-wave mixing was carried out on each sample at five temperatures between 4 and 70 K and five excitation densities between 0.5 and 2.5×109 cm-2. The maximum of both the exciton-acoustic-phonon scattering parameter and the exciton binding energy occurred at a similar well width. This indicates that the exciton-acoustic-phonon scattering rate is directly correlated to the degree of quantum confinement.

UR - http://www.scopus.com/inward/record.url?scp=0031677047&partnerID=8YFLogxK

M3 - Conference contribution

SP - 102

EP - 103

BT - Proceedings of the 1996 European Quantum Electronics Conference

T2 - 1998 International Quantum Electronics Conference

Y2 - 3 May 1998 through 8 May 1998

ER -

Exciton-acoustic-phonon scattering in (Zn,Cd)Se/ZnSe quantum wells - the influence of quantum confinement

Abstract

Conference

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