Excite-probe FEL (CLIO) study of two-photon-induced carrier dynamics in narrow gap semiconductors

B. N. Murdin, R. Rangel-Rojo, C. R. Pidgeon, M. F. Kimmitt, A. K. Kar, D. A. Jaroszynski, J. M. Ortega, R. Prazeres, F. Glotin, D. C. Hutchings

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Abstract

In a previous paper measurements were reported of two-photon absorption (TPA) in the narrow gap semiconductors InAs and InSb utilising the mid-infrared tunability of CLIO. An assumption had to be made concerning the lifetime of the excited carriers in order to interpret the results. We have now made a direct measurement of the lifetime of two-photon-induced free holes in InAs and InSb using an excite-probe technique. We have measured the TPA coefficient over the entire range from one-photon to two-photon threshold, showing good agreement with a non-parabolic band model for the process. © 1994.

Original languageEnglish
Pages (from-to)165-168
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, A
Volume341
Issue number1-3
Publication statusPublished - 1 Mar 1994

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    Murdin, B. N., Rangel-Rojo, R., Pidgeon, C. R., Kimmitt, M. F., Kar, A. K., Jaroszynski, D. A., Ortega, J. M., Prazeres, R., Glotin, F., & Hutchings, D. C. (1994). Excite-probe FEL (CLIO) study of two-photon-induced carrier dynamics in narrow gap semiconductors. Nuclear Inst. and Methods in Physics Research, A, 341(1-3), 165-168.