Excite-probe FEL (CLIO) study of two-photon-induced carrier dynamics in narrow gap semiconductors

B. N. Murdin; R. Rangel-Rojo; C. R. Pidgeon; M. F. Kimmitt; A. K. Kar; D. A. Jaroszynski; J. M. Ortega; R. Prazeres; F. Glotin; D. C. Hutchings

Excite-probe FEL (CLIO) study of two-photon-induced carrier dynamics in narrow gap semiconductors

B. N. Murdin, R. Rangel-Rojo, C. R. Pidgeon, M. F. Kimmitt, A. K. Kar, D. A. Jaroszynski, J. M. Ortega, R. Prazeres, F. Glotin, D. C. Hutchings

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In a previous paper measurements were reported of two-photon absorption (TPA) in the narrow gap semiconductors InAs and InSb utilising the mid-infrared tunability of CLIO. An assumption had to be made concerning the lifetime of the excited carriers in order to interpret the results. We have now made a direct measurement of the lifetime of two-photon-induced free holes in InAs and InSb using an excite-probe technique. We have measured the TPA coefficient over the entire range from one-photon to two-photon threshold, showing good agreement with a non-parabolic band model for the process. © 1994.

Original language	English
Pages (from-to)	165-168
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	341
Issue number	1-3
Publication status	Published - 1 Mar 1994

Cite this

@article{cf79e9ee094a4754a263ceb28b89dc53,

title = "Excite-probe FEL (CLIO) study of two-photon-induced carrier dynamics in narrow gap semiconductors",

abstract = "In a previous paper measurements were reported of two-photon absorption (TPA) in the narrow gap semiconductors InAs and InSb utilising the mid-infrared tunability of CLIO. An assumption had to be made concerning the lifetime of the excited carriers in order to interpret the results. We have now made a direct measurement of the lifetime of two-photon-induced free holes in InAs and InSb using an excite-probe technique. We have measured the TPA coefficient over the entire range from one-photon to two-photon threshold, showing good agreement with a non-parabolic band model for the process. {\textcopyright} 1994.",

author = "Murdin, {B. N.} and R. Rangel-Rojo and Pidgeon, {C. R.} and Kimmitt, {M. F.} and Kar, {A. K.} and Jaroszynski, {D. A.} and Ortega, {J. M.} and R. Prazeres and F. Glotin and Hutchings, {D. C.}",

year = "1994",

month = mar,

day = "1",

language = "English",

volume = "341",

pages = "165--168",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Excite-probe FEL (CLIO) study of two-photon-induced carrier dynamics in narrow gap semiconductors

AU - Murdin, B. N.

AU - Rangel-Rojo, R.

AU - Pidgeon, C. R.

AU - Kimmitt, M. F.

AU - Kar, A. K.

AU - Jaroszynski, D. A.

AU - Ortega, J. M.

AU - Prazeres, R.

AU - Glotin, F.

AU - Hutchings, D. C.

PY - 1994/3/1

Y1 - 1994/3/1

N2 - In a previous paper measurements were reported of two-photon absorption (TPA) in the narrow gap semiconductors InAs and InSb utilising the mid-infrared tunability of CLIO. An assumption had to be made concerning the lifetime of the excited carriers in order to interpret the results. We have now made a direct measurement of the lifetime of two-photon-induced free holes in InAs and InSb using an excite-probe technique. We have measured the TPA coefficient over the entire range from one-photon to two-photon threshold, showing good agreement with a non-parabolic band model for the process. © 1994.

AB - In a previous paper measurements were reported of two-photon absorption (TPA) in the narrow gap semiconductors InAs and InSb utilising the mid-infrared tunability of CLIO. An assumption had to be made concerning the lifetime of the excited carriers in order to interpret the results. We have now made a direct measurement of the lifetime of two-photon-induced free holes in InAs and InSb using an excite-probe technique. We have measured the TPA coefficient over the entire range from one-photon to two-photon threshold, showing good agreement with a non-parabolic band model for the process. © 1994.

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M3 - Article

SN - 0168-9002

VL - 341

SP - 165

EP - 168

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1-3

ER -

Excite-probe FEL (CLIO) study of two-photon-induced carrier dynamics in narrow gap semiconductors

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