Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature

Xin Yi; Xiao Jin; Baolai L. Liang; Harry I. J. Lewis; Qingyu Tian; Chee Hing Tan; Shiyu Xie; Qiang Li; Zhao Yan; Gerald S. Buller; John P. R. David

doi:10.1117/12.3042894

Excess noise in Al_xGa_1-xAs_0.56Sb_0.44 lattice matched to InP at room temperature

Xin Yi, Xiao Jin, Baolai L. Liang, Harry I. J. Lewis, Qingyu Tian, Chee Hing Tan, Shiyu Xie, Qiang Li, Zhao Yan, Gerald S. Buller, John P. R. David

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Abstract

There has been considerable interest over many years in finding a way by which we can amplify optical signals at the telecommunication wavelengths of 1300 and 1550nm using the impact ionization process, much as in the manner that silicon does at visible wavelengths but with low excess noise, high sensitivity and high speed. To date, Al_xGa_1-xAs_0.56Sb_0.44 is a promising avalanche material which can be grown lattice-matched to an InP substrate and therefore use InGaAs or GaAsSb as the absorption region. In this paper, we compare the excess noise in the Al_xGa_1-xAs_0.56Sb_0.44 alloy lattice matched to InP. In 2019, excess noise values of F=2.2 in AlAs_0.56Sb_0.44 based APDs were obtained at gains of M=40—significantly better than those achievable with InP or InAlAs. We very recently demonstrated sub-McIntyre characteristics with F remaining below the k=0 limit of 2 up to avalanche gains of M>60, and then increasing linearly to F=2.45 at M=90 from thick Al_0.75Ga_0.25As_0.56Sb_0.44 grown on InP substrates. We also demonstrated that the excess noise factor in the lower-aluminium Al_0.55Ga_0.45As_0.56Sb_0.44 alloy, with a bandgap of ~1.24eV, is higher than in the higher-aluminium composition alloys studied to date, but comparable to some commercial Silicon APDs and about half that of equivalent InAlAs.

Original language	English
Title of host publication	Optical Components and Materials XXII
Editors	Shibin Jiang, Michel J. Digonnet
Publisher	SPIE
ISBN (Electronic)	9781510684737
ISBN (Print)	9781510684720
DOIs	https://doi.org/10.1117/12.3042894
Publication status	Published - 21 Mar 2025
Event	OPTO 2025 - San Francisco, United States Duration: 25 Jan 2025 → 31 Jan 2025

Publication series

Name	Proceedings of SPIE
Volume	13362
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	OPTO 2025
Abbreviated title	OPTO 2025
Country/Territory	United States
City	San Francisco
Period	25/01/25 → 31/01/25

Keywords

avalanche breakdown
avalanche photodiode
excess noise
impact ionization
photodiode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.3042894

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Xin Yi, Xiao Jin, Baolai Liang, Harry Lewis, Qingyu Tian, Chee H. Tan, Shiyu Xie, Qiang Li, Zhao Yan, Gerald S. Buller, and John P. R. David "Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature", Proc. SPIE 13362, Optical Components and Materials XXII, 133620Y (21 March 2025); https://doi.org/10.1117/12.3042894 · © 2025 SPIE · 0277-786X
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Cite this

Yi, X., Jin, X., Liang, B. L., Lewis, H. I. J., Tian, Q., Tan, C. H., Xie, S., Li, Q., Yan, Z., Buller, G. S., & David, J. P. R. (2025). Excess noise in Al_xGa_1-xAs_0.56Sb_0.44 lattice matched to InP at room temperature. In S. Jiang, & M. J. Digonnet (Eds.), Optical Components and Materials XXII Article 133620Y (Proceedings of SPIE; Vol. 13362). SPIE. https://doi.org/10.1117/12.3042894

@inproceedings{779f7b802546421ab1d17e74c7757c3b,

title = "Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature",

abstract = "There has been considerable interest over many years in finding a way by which we can amplify optical signals at the telecommunication wavelengths of 1300 and 1550nm using the impact ionization process, much as in the manner that silicon does at visible wavelengths but with low excess noise, high sensitivity and high speed. To date, AlxGa1-xAs0.56Sb0.44 is a promising avalanche material which can be grown lattice-matched to an InP substrate and therefore use InGaAs or GaAsSb as the absorption region. In this paper, we compare the excess noise in the AlxGa1-xAs0.56Sb0.44 alloy lattice matched to InP. In 2019, excess noise values of F=2.2 in AlAs0.56Sb0.44 based APDs were obtained at gains of M=40—significantly better than those achievable with InP or InAlAs. We very recently demonstrated sub-McIntyre characteristics with F remaining below the k=0 limit of 2 up to avalanche gains of M>60, and then increasing linearly to F=2.45 at M=90 from thick Al0.75Ga0.25As0.56Sb0.44 grown on InP substrates. We also demonstrated that the excess noise factor in the lower-aluminium Al0.55Ga0.45As0.56Sb0.44 alloy, with a bandgap of ~1.24eV, is higher than in the higher-aluminium composition alloys studied to date, but comparable to some commercial Silicon APDs and about half that of equivalent InAlAs.",

keywords = "avalanche breakdown, avalanche photodiode, excess noise, impact ionization, photodiode",

author = "Xin Yi and Xiao Jin and Liang, {Baolai L.} and Lewis, {Harry I. J.} and Qingyu Tian and Tan, {Chee Hing} and Shiyu Xie and Qiang Li and Zhao Yan and Buller, {Gerald S.} and David, {John P. R.}",

year = "2025",

month = mar,

day = "21",

doi = "10.1117/12.3042894",

language = "English",

isbn = "9781510684720",

series = "Proceedings of SPIE",

publisher = "SPIE",

editor = "Shibin Jiang and Digonnet, {Michel J.}",

booktitle = "Optical Components and Materials XXII",

address = "United States",

note = "OPTO 2025, OPTO 2025 ; Conference date: 25-01-2025 Through 31-01-2025",

}

Yi, X, Jin, X, Liang, BL, Lewis, HIJ, Tian, Q, Tan, CH, Xie, S, Li, Q, Yan, Z, Buller, GS & David, JPR 2025, Excess noise in Al_xGa_1-xAs_0.56Sb_0.44 lattice matched to InP at room temperature. in S Jiang & MJ Digonnet (eds), Optical Components and Materials XXII., 133620Y, Proceedings of SPIE, vol. 13362, SPIE, OPTO 2025, San Francisco, California, United States, 25/01/25. https://doi.org/10.1117/12.3042894

TY - GEN

T1 - Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature

AU - Yi, Xin

AU - Jin, Xiao

AU - Liang, Baolai L.

AU - Lewis, Harry I. J.

AU - Tian, Qingyu

AU - Tan, Chee Hing

AU - Xie, Shiyu

AU - Li, Qiang

AU - Yan, Zhao

AU - Buller, Gerald S.

AU - David, John P. R.

PY - 2025/3/21

Y1 - 2025/3/21

N2 - There has been considerable interest over many years in finding a way by which we can amplify optical signals at the telecommunication wavelengths of 1300 and 1550nm using the impact ionization process, much as in the manner that silicon does at visible wavelengths but with low excess noise, high sensitivity and high speed. To date, AlxGa1-xAs0.56Sb0.44 is a promising avalanche material which can be grown lattice-matched to an InP substrate and therefore use InGaAs or GaAsSb as the absorption region. In this paper, we compare the excess noise in the AlxGa1-xAs0.56Sb0.44 alloy lattice matched to InP. In 2019, excess noise values of F=2.2 in AlAs0.56Sb0.44 based APDs were obtained at gains of M=40—significantly better than those achievable with InP or InAlAs. We very recently demonstrated sub-McIntyre characteristics with F remaining below the k=0 limit of 2 up to avalanche gains of M>60, and then increasing linearly to F=2.45 at M=90 from thick Al0.75Ga0.25As0.56Sb0.44 grown on InP substrates. We also demonstrated that the excess noise factor in the lower-aluminium Al0.55Ga0.45As0.56Sb0.44 alloy, with a bandgap of ~1.24eV, is higher than in the higher-aluminium composition alloys studied to date, but comparable to some commercial Silicon APDs and about half that of equivalent InAlAs.

AB - There has been considerable interest over many years in finding a way by which we can amplify optical signals at the telecommunication wavelengths of 1300 and 1550nm using the impact ionization process, much as in the manner that silicon does at visible wavelengths but with low excess noise, high sensitivity and high speed. To date, AlxGa1-xAs0.56Sb0.44 is a promising avalanche material which can be grown lattice-matched to an InP substrate and therefore use InGaAs or GaAsSb as the absorption region. In this paper, we compare the excess noise in the AlxGa1-xAs0.56Sb0.44 alloy lattice matched to InP. In 2019, excess noise values of F=2.2 in AlAs0.56Sb0.44 based APDs were obtained at gains of M=40—significantly better than those achievable with InP or InAlAs. We very recently demonstrated sub-McIntyre characteristics with F remaining below the k=0 limit of 2 up to avalanche gains of M>60, and then increasing linearly to F=2.45 at M=90 from thick Al0.75Ga0.25As0.56Sb0.44 grown on InP substrates. We also demonstrated that the excess noise factor in the lower-aluminium Al0.55Ga0.45As0.56Sb0.44 alloy, with a bandgap of ~1.24eV, is higher than in the higher-aluminium composition alloys studied to date, but comparable to some commercial Silicon APDs and about half that of equivalent InAlAs.

KW - avalanche breakdown

KW - avalanche photodiode

KW - excess noise

KW - impact ionization

KW - photodiode

UR - http://www.scopus.com/inward/record.url?scp=105005952667&partnerID=8YFLogxK

U2 - 10.1117/12.3042894

DO - 10.1117/12.3042894

M3 - Conference contribution

SN - 9781510684720

T3 - Proceedings of SPIE

BT - Optical Components and Materials XXII

A2 - Jiang, Shibin

A2 - Digonnet, Michel J.

PB - SPIE

T2 - OPTO 2025

Y2 - 25 January 2025 through 31 January 2025

ER -