Evolution of nonequilibrium electron distributions in wide semiconductor quantum wells on ultrashort timescales

T. S C Lee; I. Galbraith

Evolution of nonequilibrium electron distributions in wide semiconductor quantum wells on ultrashort timescales

T. S C Lee, I. Galbraith

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A detailed calculations of the evolution of nonequilibrium electron distributions excited within the subbands of a GaAs quantum well was performed through the numerical integration of the Boltzmann collision integrals. The electron-electron scattering process was studied and mediated through the dynamically-screened Coulomb interaction, which was evaluated using the full dynamic, multisubband dielectric function derived in the random phase approximation (RPA).

Original language	English
Title of host publication	Proceedings of the 1999 Quantum Electronics and Laser Science Conference
Pages	204-205
Number of pages	2
Publication status	Published - 1999
Event	1999 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States Duration: 23 May 1999 → 28 May 1999

Conference

Conference	1999 Quantum Electronics and Laser Science Conference
Abbreviated title	QELS '99
Country/Territory	United States
City	Baltimore, MD
Period	23/05/99 → 28/05/99

Cite this

@inproceedings{360291f7c83843b99efe049add49c5e7,

title = "Evolution of nonequilibrium electron distributions in wide semiconductor quantum wells on ultrashort timescales",

abstract = "A detailed calculations of the evolution of nonequilibrium electron distributions excited within the subbands of a GaAs quantum well was performed through the numerical integration of the Boltzmann collision integrals. The electron-electron scattering process was studied and mediated through the dynamically-screened Coulomb interaction, which was evaluated using the full dynamic, multisubband dielectric function derived in the random phase approximation (RPA).",

author = "Lee, \{T. S C\} and I. Galbraith",

year = "1999",

language = "English",

pages = "204--205",

booktitle = "Proceedings of the 1999 Quantum Electronics and Laser Science Conference",

note = "1999 Quantum Electronics and Laser Science Conference, QELS '99 ; Conference date: 23-05-1999 Through 28-05-1999",

}

TY - GEN

T1 - Evolution of nonequilibrium electron distributions in wide semiconductor quantum wells on ultrashort timescales

AU - Lee, T. S C

AU - Galbraith, I.

PY - 1999

Y1 - 1999

N2 - A detailed calculations of the evolution of nonequilibrium electron distributions excited within the subbands of a GaAs quantum well was performed through the numerical integration of the Boltzmann collision integrals. The electron-electron scattering process was studied and mediated through the dynamically-screened Coulomb interaction, which was evaluated using the full dynamic, multisubband dielectric function derived in the random phase approximation (RPA).

AB - A detailed calculations of the evolution of nonequilibrium electron distributions excited within the subbands of a GaAs quantum well was performed through the numerical integration of the Boltzmann collision integrals. The electron-electron scattering process was studied and mediated through the dynamically-screened Coulomb interaction, which was evaluated using the full dynamic, multisubband dielectric function derived in the random phase approximation (RPA).

UR - https://www.scopus.com/pages/publications/0032655608

M3 - Conference contribution

SP - 204

EP - 205

BT - Proceedings of the 1999 Quantum Electronics and Laser Science Conference

T2 - 1999 Quantum Electronics and Laser Science Conference

Y2 - 23 May 1999 through 28 May 1999

ER -

Evolution of nonequilibrium electron distributions in wide semiconductor quantum wells on ultrashort timescales

Abstract

Conference

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