Evolution of nonequilibrium electron distributions in wide semiconductor quantum wells on ultrashort timescales

T. S C Lee, I. Galbraith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A detailed calculations of the evolution of nonequilibrium electron distributions excited within the subbands of a GaAs quantum well was performed through the numerical integration of the Boltzmann collision integrals. The electron-electron scattering process was studied and mediated through the dynamically-screened Coulomb interaction, which was evaluated using the full dynamic, multisubband dielectric function derived in the random phase approximation (RPA).

Original languageEnglish
Title of host publicationProceedings of the 1999 Quantum Electronics and Laser Science Conference
Pages204-205
Number of pages2
Publication statusPublished - 1999
Event1999 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States
Duration: 23 May 199928 May 1999

Conference

Conference1999 Quantum Electronics and Laser Science Conference
Abbreviated titleQELS '99
CountryUnited States
CityBaltimore, MD
Period23/05/9928/05/99

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