Evidence of strong effect from the interface on the electrical characteristics of ZnSe/GaAs heterojunctions

D. Seghier, I. S. Hauksson, H. P. Gislason, K. A. Prior, B. C. Cavenett

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Abstract

The interface properties of the molecular beam epitaxy (MBE)-grown ZnSe/GaAs system were investigated. A smooth reverse current-voltage (I-V) characteristic of the heterojunction and a slow increase in the current at constant reverse bias were observed. The slow capacitance transients are due to a change in the reverse bias. The slow relaxation induces a hysteresis in the I-V and capacitance-voltage (C-V) characteristics of the heterojunctions. A large frequency dispersion of the capacitance and a broad peak in the conductance spectra were observed at high temperature, which is due to the presence of a density of energy distributed interface states at the heterointerface.

Original languageEnglish
Pages (from-to)3721-3725
Number of pages5
JournalJournal of Applied Physics
Volume85
Issue number7
Publication statusPublished - 1 Apr 1999

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    Seghier, D., Hauksson, I. S., Gislason, H. P., Prior, K. A., & Cavenett, B. C. (1999). Evidence of strong effect from the interface on the electrical characteristics of ZnSe/GaAs heterojunctions. Journal of Applied Physics, 85(7), 3721-3725.