Erbium-doped waveguide fabrication via reactive pulsed laser deposition of erbium-doped oxyfluoride-silicate glass

R. R. Thomson, H. T. Bookey, A. K. Kar, M. R. Taghizadeh, A. Klini, C. Fotakis, F. Romano, A. P. Caricato, M. Martino, S. Shen, A. Jha

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Abstract

Using reactive pulsed laser deposition, a thin film of erbium-doped oxyfluoride-silicate glass is deposited onto a fused silica substrate. Rib waveguides are fabricated from this film using reactive ion etching. The fabrication and characterisation of these waveguides are summarised. As a result of various characterisation experiments described here, it is concluded that close to stoichiometric transfer of material from the bulk to the film has been achieved. It is concluded, however, that strong quenching mechanisms are present in the film, significantly affecting the magnitude of the 4I 13/2?4I15/2 transition fluorescence lifetime.

Original languageEnglish
Pages (from-to)23-24
Number of pages2
JournalElectronics Letters
Volume41
Issue number25
DOIs
Publication statusPublished - 8 Dec 2005

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    Thomson, R. R., Bookey, H. T., Kar, A. K., Taghizadeh, M. R., Klini, A., Fotakis, C., Romano, F., Caricato, A. P., Martino, M., Shen, S., & Jha, A. (2005). Erbium-doped waveguide fabrication via reactive pulsed laser deposition of erbium-doped oxyfluoride-silicate glass. Electronics Letters, 41(25), 23-24. https://doi.org/10.1049/el:20053203