Erbium Doped Waveguide Amplifiers (EDWAs) fabricated via a single sol-gel deposition technique

R. R. Thomso, H. T. Bookey, A. K. Kar, H. Ur-Rehman, S. Liu, N. Suyal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we present erbium absorption, gain, fluorescence lifetime and waveguide loss characterisation results for Erbium Doped Waveguide Amplifiers (EDWAs) fabricated using a single sol-gel deposition for each of the core and cladding layers. © 2005 Optical Society of America.

Original languageEnglish
Title of host publication2005 Conference on Lasers and Electro-Optics, CLEO
Pages1688-1690
Number of pages3
Volume3
Publication statusPublished - 2005
Event2005 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States
Duration: 22 May 200527 May 2005

Conference

Conference2005 Quantum Electronics and Laser Science Conference
Abbreviated titleQELS
CountryUnited States
CityBaltimore, MD
Period22/05/0527/05/05

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    Thomso, R. R., Bookey, H. T., Kar, A. K., Ur-Rehman, H., Liu, S., & Suyal, N. (2005). Erbium Doped Waveguide Amplifiers (EDWAs) fabricated via a single sol-gel deposition technique. In 2005 Conference on Lasers and Electro-Optics, CLEO (Vol. 3, pp. 1688-1690)