Localized heteroepitaxial growth of diamond on (100) silicon was investigated using microwave plasma deposition. The final growth was performed in hydrogen-carbon-monoxide-methane gas mixtures conducive to (100) texturing of the crystallites. The deposition was preceded by either a single or two-stage in situ bias treatment to enhance the nucleation density. An initial carburization stage was not found to be essential although the inclusion of this step reduced the bias period required for epitaxy. The bias current-time characteristics exhibit features which could be interpreted as changes in the chemical composition of the nucleation layer. Epitaxial films were produced with grain sizes of 15-20 µm. © 1995.
|Number of pages||7|
|Journal||Diamond and Related Materials|
|Publication status||Published - 15 Apr 1995|