Epitaxial vanadium nanolayers to suppress interfacial reactions during deposition of titanium-bearing Heusler alloys on MgO(001)

R. W. H. Webster, M. T. Scott, S. R. Popuri, J. W. G. Bos, D. A. Maclaren

Research output: Contribution to journalArticle

1 Citation (Scopus)
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Abstract

Epitaxial growth of the half-Heusler alloy TiNiSn onto (100)-oriented MgO is compromised by interfacial reactions driven by the oxidising potential of titanium. Here, we demonstrate that a few epitaxial monolayers of elemental vanadium are sufficient to act as an impermeable buffer that maintains epitaxy and stoichiometric thin film growth but suppresses interfacial oxidation of the alloy. Electron diffraction and microscopy are used to characterise the thin film morphologies and thereby determine the optimum deposition conditions. Electron energy loss spectroscopy is used to demonstrate the chemical nature of the resulting thin film interfaces and confirms that TiNiSn film quality is improved.
Original languageEnglish
Article number145649
JournalApplied Surface Science
Volume512
Early online date4 Feb 2020
DOIs
Publication statusPublished - 15 May 2020

Keywords

  • Contact layer
  • Epitaxy
  • Half-Heuslers
  • TEM
  • Thermoelectric
  • Thin-fim

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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