Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer

A. Balocchi, A. Curran, T. C M Graham, C. Bradford, K. A. Prior, R. J. Warburton

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Abstract

Epitaxial liftoff is a post-growth process by which the active part of a semiconductor heterostructure, the epitaxial layer, is removed from its original substrate and deposited onto a new substrate. This is a well established technique in GaAs-based heterostructures where epitaxial liftoff can be achieved by exploiting the contrast in the etch rates of GaAs and AlAs in hydrofluoric acid. We report here successful epitaxial liftoff of a ZnSe-based heterostructure. We find that a metastable layer of MgS acts as a perfect release layer based on the huge contrast in the etch rates of ZnSe and MgS in hydrochloric acid. Epitaxial liftoff of millimeter-sized ZnSe samples takes a fraction of the time required for GaAs liftoff. Photoluminescence experiments confirm that the liftoff layer has the same optical characteristics as the original wafer material. © 2005 American Institute of Physics.

Original languageEnglish
Article number011915
Pages (from-to)011915-1-011915-3
JournalApplied Physics Letters
Volume86
Issue number1
DOIs
Publication statusPublished - Jan 2005

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    Balocchi, A., Curran, A., Graham, T. C. M., Bradford, C., Prior, K. A., & Warburton, R. J. (2005). Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer. Applied Physics Letters, 86(1), 011915-1-011915-3. [011915]. https://doi.org/10.1063/1.1844595