Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

C. Bradford; A. Currran; A. Balocchi; B. C. Cavenett; K. A. Prior; R. J. Warburton

doi:10.1016/j.jcrysgro.2005.01.019

Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

C. Bradford, A. Currran, A. Balocchi, B. C. Cavenett, K. A. Prior, R. J. Warburton

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off. © 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	325-328
Number of pages	4
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.01.019
Publication status	Published - 1 May 2005
Event	13th International Conference on Molecular Beam Epitaxy - Duration: 22 Aug 2004 → 27 Aug 2004

Keywords

A1. Etching
A1. Solubility
A3. MBE
A3. Quantum wells
B1. Sulphides
B2. Semiconducting II-VI compounds

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10.1016/j.jcrysgro.2005.01.019

Cite this

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title = "Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer",

abstract = "Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off. {\textcopyright} 2005 Elsevier B.V. All rights reserved.",

keywords = "A1. Etching, A1. Solubility, A3. MBE, A3. Quantum wells, B1. Sulphides, B2. Semiconducting II-VI compounds",

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journal = "Journal of Crystal Growth",

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T1 - Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

AU - Bradford, C.

AU - Currran, A.

AU - Balocchi, A.

AU - Cavenett, B. C.

AU - Prior, K. A.

AU - Warburton, R. J.

PY - 2005/5/1

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AB - Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off. © 2005 Elsevier B.V. All rights reserved.

KW - A1. Etching

KW - A1. Solubility

KW - A3. MBE

KW - A3. Quantum wells

KW - B1. Sulphides

KW - B2. Semiconducting II-VI compounds

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DO - 10.1016/j.jcrysgro.2005.01.019

M3 - Article

SN - 0022-0248

VL - 278

SP - 325

EP - 328

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

Abstract

Keywords

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