Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

C. Bradford, A. Currran, A. Balocchi, B. C. Cavenett, K. A. Prior, R. J. Warburton

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Abstract

Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off. © 2005 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)325-328
Number of pages4
JournalJournal of Crystal Growth
Volume278
Issue number1-4
DOIs
Publication statusPublished - 1 May 2005
Event13th International Conference on Molecular Beam Epitaxy -
Duration: 22 Aug 200427 Aug 2004

Keywords

  • A1. Etching
  • A1. Solubility
  • A3. MBE
  • A3. Quantum wells
  • B1. Sulphides
  • B2. Semiconducting II-VI compounds

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    Bradford, C., Currran, A., Balocchi, A., Cavenett, B. C., Prior, K. A., & Warburton, R. J. (2005). Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer. Journal of Crystal Growth, 278(1-4), 325-328. https://doi.org/10.1016/j.jcrysgro.2005.01.019