Epitaxial growth of zinc blende MgS directly on GaAs (0 0 1) substrates

Akhil Rajan, Richard T Moug, Kevin Alan Prior

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3 Citations (Scopus)


We report the epitaxial growth of zinc blende MgS directly on GaAs (0 0 1) substrates without the use of any II-VI buffer layer. MgS layers up to 35 nm thick were grown before conversion to the rocksalt phase is observed. The layers were grown by molecular beam epitaxy using significantly lower Mg fluxes than previously used and over a narrow temperature range of 230-255 degrees C. Analysis of the layers during and after growth shows very little difference between these and layers deposited conventionally on ZnSe buffers. In particular, the low Mg flux does not significantly alter the growth rate or residual Zn content. This point is discussed with respect to previous models of MgS growth.

Original languageEnglish
Article number025006
Number of pages5
JournalSemiconductor Science and Technology
Issue number2
Publication statusPublished - Feb 2014


  • metastable growth
  • zinc blende MgS
  • phase transition
  • sulfide growth
  • molecular beam epitaxy
  • MBE
  • DOTS

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