Epitaxial growth of zinc blende MgS directly on GaAs (0 0 1) substrates

Akhil Rajan, Richard T Moug, Kevin Alan Prior

Research output: Contribution to journalArticle

Abstract

We report the epitaxial growth of zinc blende MgS directly on GaAs (0 0 1) substrates without the use of any II-VI buffer layer. MgS layers up to 35 nm thick were grown before conversion to the rocksalt phase is observed. The layers were grown by molecular beam epitaxy using significantly lower Mg fluxes than previously used and over a narrow temperature range of 230-255 degrees C. Analysis of the layers during and after growth shows very little difference between these and layers deposited conventionally on ZnSe buffers. In particular, the low Mg flux does not significantly alter the growth rate or residual Zn content. This point is discussed with respect to previous models of MgS growth.

Original languageEnglish
Article number025006
Number of pages5
JournalSemiconductor Science and Technology
Volume29
Issue number2
DOIs
Publication statusPublished - Feb 2014

Keywords

  • metastable growth
  • zinc blende MgS
  • phase transition
  • sulfide growth
  • molecular beam epitaxy
  • MOLECULAR-BEAM EPITAXY
  • QUANTUM-WELLS
  • MBE
  • SUPERLATTICES
  • LAYER
  • DOTS

Cite this

Rajan, Akhil ; Moug, Richard T ; Prior, Kevin Alan. / Epitaxial growth of zinc blende MgS directly on GaAs (0 0 1) substrates. In: Semiconductor Science and Technology. 2014 ; Vol. 29, No. 2.
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Epitaxial growth of zinc blende MgS directly on GaAs (0 0 1) substrates. / Rajan, Akhil; Moug, Richard T; Prior, Kevin Alan.

In: Semiconductor Science and Technology, Vol. 29, No. 2, 025006, 02.2014.

Research output: Contribution to journalArticle

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AB - We report the epitaxial growth of zinc blende MgS directly on GaAs (0 0 1) substrates without the use of any II-VI buffer layer. MgS layers up to 35 nm thick were grown before conversion to the rocksalt phase is observed. The layers were grown by molecular beam epitaxy using significantly lower Mg fluxes than previously used and over a narrow temperature range of 230-255 degrees C. Analysis of the layers during and after growth shows very little difference between these and layers deposited conventionally on ZnSe buffers. In particular, the low Mg flux does not significantly alter the growth rate or residual Zn content. This point is discussed with respect to previous models of MgS growth.

KW - metastable growth

KW - zinc blende MgS

KW - phase transition

KW - sulfide growth

KW - molecular beam epitaxy

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