Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion

Bryce S. Richards; Avi Shalav

doi:10.1109/TED.2007.903197

Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion

Bryce S. Richards, Avi Shalav

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

148 Citations (Scopus)

Abstract

A silicon-based optoelectronic device that exhibits an enhanced response to subbandgap light is described. The device structure consists of a bifacial silicon solar cell with an upconverting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY_0.8 F₄: Er_0.2³⁺) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized device is demonstrated to respond effectively to wavelengths (?) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 × 10^-2 cm²/ W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the device is 16.7% at 2.4 W/cm² of 1523-nm excitation (LQE = 7.0 × 10^-2 cm²/ W), while further potential device improvements indicate that an EQE of 14.0% (5.8 × 10^-2 cm²/W) could be realistically achieved. © 2007 IEEE.

Original language	English
Pages (from-to)	2679-2684
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	10
DOIs	https://doi.org/10.1109/TED.2007.903197
Publication status	Published - Oct 2007

Keywords

Luminescence
Photovoltaics (PVs)
Silicon solar cells
Up-conversion (UC)

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10.1109/TED.2007.903197

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title = "Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion",

abstract = "A silicon-based optoelectronic device that exhibits an enhanced response to subbandgap light is described. The device structure consists of a bifacial silicon solar cell with an upconverting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY0.8 F4: Er0.23+) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized device is demonstrated to respond effectively to wavelengths (?) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 × 10-2 cm2/ W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the device is 16.7% at 2.4 W/cm2 of 1523-nm excitation (LQE = 7.0 × 10-2 cm2/ W), while further potential device improvements indicate that an EQE of 14.0% (5.8 × 10-2 cm2/W) could be realistically achieved. {\textcopyright} 2007 IEEE.",

keywords = "Luminescence, Photovoltaics (PVs), Silicon solar cells, Up-conversion (UC)",

author = "Richards, {Bryce S.} and Avi Shalav",

year = "2007",

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doi = "10.1109/TED.2007.903197",

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T1 - Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion

AU - Richards, Bryce S.

AU - Shalav, Avi

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N2 - A silicon-based optoelectronic device that exhibits an enhanced response to subbandgap light is described. The device structure consists of a bifacial silicon solar cell with an upconverting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY0.8 F4: Er0.23+) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized device is demonstrated to respond effectively to wavelengths (?) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 × 10-2 cm2/ W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the device is 16.7% at 2.4 W/cm2 of 1523-nm excitation (LQE = 7.0 × 10-2 cm2/ W), while further potential device improvements indicate that an EQE of 14.0% (5.8 × 10-2 cm2/W) could be realistically achieved. © 2007 IEEE.

AB - A silicon-based optoelectronic device that exhibits an enhanced response to subbandgap light is described. The device structure consists of a bifacial silicon solar cell with an upconverting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY0.8 F4: Er0.23+) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized device is demonstrated to respond effectively to wavelengths (?) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 × 10-2 cm2/ W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the device is 16.7% at 2.4 W/cm2 of 1523-nm excitation (LQE = 7.0 × 10-2 cm2/ W), while further potential device improvements indicate that an EQE of 14.0% (5.8 × 10-2 cm2/W) could be realistically achieved. © 2007 IEEE.

KW - Luminescence

KW - Photovoltaics (PVs)

KW - Silicon solar cells

KW - Up-conversion (UC)

U2 - 10.1109/TED.2007.903197

DO - 10.1109/TED.2007.903197

M3 - Article

SN - 0018-9383

VL - 54

SP - 2679

EP - 2684

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Enhancing the near-infrared spectral response of silicon optoelectronic devices via up-conversion

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Keywords

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