Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

Alison Y. Loudon; Philip A. Hiskett; Gerald S. Buller; Roger T. Carline; Dave C. Herbert; W. Y. Leong; John G. Rarity

Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

Alison Y. Loudon
, Philip A. Hiskett
, Gerald S. Buller
, Roger T. Carline
, Dave C. Herbert
, W. Y. Leong
, John G. Rarity

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si_0.7Ge_0.3 device is capable of room-temperature operation and has a response time of less than 300 ps. © 2002 Optical Society of America.

Original language	English
Pages (from-to)	219-221
Number of pages	3
Journal	Optics Letters
Volume	27
Issue number	4
Publication status	Published - 15 Feb 2002

Cite this

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title = "Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers",

abstract = "An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps. {\textcopyright} 2002 Optical Society of America.",

author = "Loudon, \{Alison Y.\} and Hiskett, \{Philip A.\} and Buller, \{Gerald S.\} and Carline, \{Roger T.\} and Herbert, \{Dave C.\} and Leong, \{W. Y.\} and Rarity, \{John G.\}",

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month = feb,

day = "15",

language = "English",

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pages = "219--221",

journal = "Optics Letters",

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T1 - Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

AU - Loudon, Alison Y.

AU - Hiskett, Philip A.

AU - Buller, Gerald S.

AU - Carline, Roger T.

AU - Herbert, Dave C.

AU - Leong, W. Y.

AU - Rarity, John G.

PY - 2002/2/15

Y1 - 2002/2/15

N2 - An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps. © 2002 Optical Society of America.

AB - An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps. © 2002 Optical Society of America.

UR - https://www.scopus.com/pages/publications/0037085125

M3 - Article

SN - 1539-4794

VL - 27

SP - 219

EP - 221

JO - Optics Letters

JF - Optics Letters

IS - 4

ER -

Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

Abstract

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