Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

Alison Y. Loudon; Philip A. Hiskett; Gerald S. Buller; Roger T. Carline; Dave C. Herbert; W. Y. Leong; John G. Rarity

Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

Alison Y. Loudon, Philip A. Hiskett, Gerald S. Buller, Roger T. Carline, Dave C. Herbert, W. Y. Leong, John G. Rarity

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si_0.7Ge_0.3 device is capable of room-temperature operation and has a response time of less than 300 ps. © 2002 Optical Society of America.

Original language	English
Pages (from-to)	219-221
Number of pages	3
Journal	Optics Letters
Volume	27
Issue number	4
Publication status	Published - 15 Feb 2002

Cite this

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title = "Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers",

abstract = "An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps. {\textcopyright} 2002 Optical Society of America.",

author = "Loudon, {Alison Y.} and Hiskett, {Philip A.} and Buller, {Gerald S.} and Carline, {Roger T.} and Herbert, {Dave C.} and Leong, {W. Y.} and Rarity, {John G.}",

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T1 - Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

AU - Loudon, Alison Y.

AU - Hiskett, Philip A.

AU - Buller, Gerald S.

AU - Carline, Roger T.

AU - Herbert, Dave C.

AU - Leong, W. Y.

AU - Rarity, John G.

PY - 2002/2/15

Y1 - 2002/2/15

N2 - An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps. © 2002 Optical Society of America.

AB - An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps. © 2002 Optical Society of America.

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M3 - Article

SN - 0146-9592

VL - 27

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JO - Optics Letters

JF - Optics Letters

IS - 4

ER -

Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

Abstract

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