Enhancement and reduction of line broadening due to Auger scattering in modulation-doped InGaAsGaAs quantum dot devices

H. H. Nilsson, J. Z. Zhang, I. Galbraith

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We calculate the line broadening of various Auger processes in modulation-doped InGaAsGaAs quantum dot (QD) semiconductor optical amplifiers (SOAs), involving scattering of carriers between wetting-layer states and confined QD states. We find that, as a result of p doping, the optical gain and the linewidth are significantly enhanced, while in shallow dots, n doping surprisingly leads to a reduction in the homogeneous linewidth. Our findings support the development of high-speed QD lasers and SOAs incorporating p doping and using optical amplifiers with n -doped shallow QDs for wavelength-division- multiplexing applications. © 2007 American Institute of Physics.

Original languageEnglish
Article number161113
JournalApplied Physics Letters
Volume91
Issue number16
DOIs
Publication statusPublished - 2007

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