We calculate the line broadening of various Auger processes in modulation-doped InGaAsGaAs quantum dot (QD) semiconductor optical amplifiers (SOAs), involving scattering of carriers between wetting-layer states and confined QD states. We find that, as a result of p doping, the optical gain and the linewidth are significantly enhanced, while in shallow dots, n doping surprisingly leads to a reduction in the homogeneous linewidth. Our findings support the development of high-speed QD lasers and SOAs incorporating p doping and using optical amplifiers with n -doped shallow QDs for wavelength-division- multiplexing applications. © 2007 American Institute of Physics.
|Journal||Applied Physics Letters|
|Publication status||Published - 2007|