Enhancement and reduction of line broadening due to Auger scattering in modulation-doped InGaAsGaAs quantum dot devices

H. H. Nilsson; J. Z. Zhang; I. Galbraith

doi:10.1063/1.2799244

Enhancement and reduction of line broadening due to Auger scattering in modulation-doped InGaAsGaAs quantum dot devices

H. H. Nilsson, J. Z. Zhang, I. Galbraith

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We calculate the line broadening of various Auger processes in modulation-doped InGaAsGaAs quantum dot (QD) semiconductor optical amplifiers (SOAs), involving scattering of carriers between wetting-layer states and confined QD states. We find that, as a result of p doping, the optical gain and the linewidth are significantly enhanced, while in shallow dots, n doping surprisingly leads to a reduction in the homogeneous linewidth. Our findings support the development of high-speed QD lasers and SOAs incorporating p doping and using optical amplifiers with n -doped shallow QDs for wavelength-division- multiplexing applications. © 2007 American Institute of Physics.

Original language	English
Article number	161113
Journal	Applied Physics Letters
Volume	91
Issue number	16
DOIs	https://doi.org/10.1063/1.2799244
Publication status	Published - 2007

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title = "Enhancement and reduction of line broadening due to Auger scattering in modulation-doped InGaAsGaAs quantum dot devices",

abstract = "We calculate the line broadening of various Auger processes in modulation-doped InGaAsGaAs quantum dot (QD) semiconductor optical amplifiers (SOAs), involving scattering of carriers between wetting-layer states and confined QD states. We find that, as a result of p doping, the optical gain and the linewidth are significantly enhanced, while in shallow dots, n doping surprisingly leads to a reduction in the homogeneous linewidth. Our findings support the development of high-speed QD lasers and SOAs incorporating p doping and using optical amplifiers with n -doped shallow QDs for wavelength-division- multiplexing applications. {\textcopyright} 2007 American Institute of Physics.",

author = "Nilsson, {H. H.} and Zhang, {J. Z.} and I. Galbraith",

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doi = "10.1063/1.2799244",

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journal = "Applied Physics Letters",

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AU - Nilsson, H. H.

AU - Zhang, J. Z.

AU - Galbraith, I.

PY - 2007

Y1 - 2007

N2 - We calculate the line broadening of various Auger processes in modulation-doped InGaAsGaAs quantum dot (QD) semiconductor optical amplifiers (SOAs), involving scattering of carriers between wetting-layer states and confined QD states. We find that, as a result of p doping, the optical gain and the linewidth are significantly enhanced, while in shallow dots, n doping surprisingly leads to a reduction in the homogeneous linewidth. Our findings support the development of high-speed QD lasers and SOAs incorporating p doping and using optical amplifiers with n -doped shallow QDs for wavelength-division- multiplexing applications. © 2007 American Institute of Physics.

AB - We calculate the line broadening of various Auger processes in modulation-doped InGaAsGaAs quantum dot (QD) semiconductor optical amplifiers (SOAs), involving scattering of carriers between wetting-layer states and confined QD states. We find that, as a result of p doping, the optical gain and the linewidth are significantly enhanced, while in shallow dots, n doping surprisingly leads to a reduction in the homogeneous linewidth. Our findings support the development of high-speed QD lasers and SOAs incorporating p doping and using optical amplifiers with n -doped shallow QDs for wavelength-division- multiplexing applications. © 2007 American Institute of Physics.

U2 - 10.1063/1.2799244

DO - 10.1063/1.2799244

M3 - Article

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161113

ER -

Enhancement and reduction of line broadening due to Auger scattering in modulation-doped InGaAsGaAs quantum dot devices

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