Enhanced n-type dopant solubility in tensile-strained Si

Nick Bennett*, H. H. Radamson, C. S. Beer, A. J. Smith, R. M. Gwilliam, Nick E. B. Cowern, B. J. Sealy

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a contender to replace As in strain-engineered CMOS devices due to advantages in sheet resistance. While strain reduces resistance for both As and Sb; a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall measurements suggest this is a consequence of a strain-induced Sb solubility enhancement following solid-phase epitaxial regrowth, increasing Sb solubility in Si to levels approaching 1021 cm- 3. Experiments highlight the importance of maintaining substrate strain during thermal annealing to maintain this high Sb activation.

Original languageEnglish
Pages (from-to)331-333
Number of pages3
JournalThin Solid Films
Issue number1
Publication statusPublished - 3 Nov 2008


  • Antimony
  • Arsenic
  • Hall effect
  • Ion Implantation
  • Solid phase epitaxy
  • Stress

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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