Abstract
The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a contender to replace As in strain-engineered CMOS devices due to advantages in sheet resistance. While strain reduces resistance for both As and Sb; a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall measurements suggest this is a consequence of a strain-induced Sb solubility enhancement following solid-phase epitaxial regrowth, increasing Sb solubility in Si to levels approaching 1021 cm- 3. Experiments highlight the importance of maintaining substrate strain during thermal annealing to maintain this high Sb activation.
Original language | English |
---|---|
Pages (from-to) | 331-333 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 517 |
Issue number | 1 |
DOIs | |
Publication status | Published - 3 Nov 2008 |
Keywords
- Antimony
- Arsenic
- Hall effect
- Ion Implantation
- Solid phase epitaxy
- Stress
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces