Enhanced antimony activation for ultra-shallow junctions in strained silicon

Nick Bennett*, A. J. Smith, C. S. Beer, L. O'Reilly, B. Colombeau, G. D. Dilliway, R. Harper, Patrick J. McNally, Russell Gwilliam, Nick E. B. Cowern, B. J. Sealy

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained Si. Results re-emphasise the Rs reduction for As comes purely as a result of mobility improvement [1,2] whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. For the first time, strain is shown to enhance the activation of dopant atoms whilst Sb is seen to create stable ultra-shallow junctions. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultra-shallow junctions for use with strain-engineered CMOS devices.

Original languageEnglish
Title of host publicationDoping engineering for device fabrication
Subtitle of host publicationsymposium held April 18-19, 2006, San Francisco, California, U.S.A.
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558998683, 9781558998681
Publication statusPublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 18 Apr 200619 Apr 2006


Conference2006 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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