Enhanced antimony activation for ultra-shallow junctions in strained silicon

Nick Bennett; A. J. Smith; C. S. Beer; L. O'Reilly; B. Colombeau; G. D. Dilliway; R. Harper; Patrick J. McNally; Russell Gwilliam; Nick E. B. Cowern; B. J. Sealy

doi:10.1557/PROC-0912-C02-03

Enhanced antimony activation for ultra-shallow junctions in strained silicon

Nick Bennett^*, A. J. Smith, C. S. Beer, L. O'Reilly, B. Colombeau, G. D. Dilliway, R. Harper, Patrick J. McNally, Russell Gwilliam, Nick E. B. Cowern, B. J. Sealy

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained Si. Results re-emphasise the Rs reduction for As comes purely as a result of mobility improvement [1,2] whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. For the first time, strain is shown to enhance the activation of dopant atoms whilst Sb is seen to create stable ultra-shallow junctions. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultra-shallow junctions for use with strain-engineered CMOS devices.

Original language	English
Title of host publication	Doping engineering for device fabrication
Subtitle of host publication	symposium held April 18-19, 2006, San Francisco, California, U.S.A.
Publisher	Materials Research Society
Pages	59-64
Number of pages	6
Volume	912
ISBN (Print)	1558998683, 9781558998681
DOIs	https://doi.org/10.1557/PROC-0912-C02-03
Publication status	Published - 2006
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: 18 Apr 2006 → 19 Apr 2006

Conference

Conference	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	18/04/06 → 19/04/06

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1557/PROC-0912-C02-03

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Bennett, N., Smith, A. J., Beer, C. S., O'Reilly, L., Colombeau, B., Dilliway, G. D., Harper, R., McNally, P. J., Gwilliam, R., Cowern, N. E. B., & Sealy, B. J. (2006). Enhanced antimony activation for ultra-shallow junctions in strained silicon. In Doping engineering for device fabrication: symposium held April 18-19, 2006, San Francisco, California, U.S.A. (Vol. 912, pp. 59-64). Materials Research Society. https://doi.org/10.1557/PROC-0912-C02-03

@inproceedings{a63339b961594c9cb9ad3d3c27728dee,

title = "Enhanced antimony activation for ultra-shallow junctions in strained silicon",

abstract = "Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained Si. Results re-emphasise the Rs reduction for As comes purely as a result of mobility improvement [1,2] whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. For the first time, strain is shown to enhance the activation of dopant atoms whilst Sb is seen to create stable ultra-shallow junctions. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultra-shallow junctions for use with strain-engineered CMOS devices.",

author = "Nick Bennett and Smith, {A. J.} and Beer, {C. S.} and L. O'Reilly and B. Colombeau and Dilliway, {G. D.} and R. Harper and McNally, {Patrick J.} and Russell Gwilliam and Cowern, {Nick E. B.} and Sealy, {B. J.}",

year = "2006",

doi = "10.1557/PROC-0912-C02-03",

language = "English",

isbn = "1558998683",

volume = "912",

pages = "59--64",

booktitle = "Doping engineering for device fabrication",

publisher = "Materials Research Society",

address = "United States",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 19-04-2006",

}

Bennett, N, Smith, AJ, Beer, CS, O'Reilly, L, Colombeau, B, Dilliway, GD, Harper, R, McNally, PJ, Gwilliam, R, Cowern, NEB & Sealy, BJ 2006, Enhanced antimony activation for ultra-shallow junctions in strained silicon. in Doping engineering for device fabrication: symposium held April 18-19, 2006, San Francisco, California, U.S.A.. vol. 912, Materials Research Society, pp. 59-64, 2006 MRS Spring Meeting, San Francisco, CA, United States, 18/04/06. https://doi.org/10.1557/PROC-0912-C02-03

Enhanced antimony activation for ultra-shallow junctions in strained silicon. / Bennett, Nick; Smith, A. J.; Beer, C. S. et al.
Doping engineering for device fabrication: symposium held April 18-19, 2006, San Francisco, California, U.S.A.. Vol. 912 Materials Research Society, 2006. p. 59-64.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Enhanced antimony activation for ultra-shallow junctions in strained silicon

AU - Bennett, Nick

AU - Smith, A. J.

AU - Beer, C. S.

AU - O'Reilly, L.

AU - Colombeau, B.

AU - Dilliway, G. D.

AU - Harper, R.

AU - McNally, Patrick J.

AU - Gwilliam, Russell

AU - Cowern, Nick E. B.

AU - Sealy, B. J.

PY - 2006

Y1 - 2006

N2 - Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained Si. Results re-emphasise the Rs reduction for As comes purely as a result of mobility improvement [1,2] whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. For the first time, strain is shown to enhance the activation of dopant atoms whilst Sb is seen to create stable ultra-shallow junctions. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultra-shallow junctions for use with strain-engineered CMOS devices.

AB - Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained Si. Results re-emphasise the Rs reduction for As comes purely as a result of mobility improvement [1,2] whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. For the first time, strain is shown to enhance the activation of dopant atoms whilst Sb is seen to create stable ultra-shallow junctions. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultra-shallow junctions for use with strain-engineered CMOS devices.

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DO - 10.1557/PROC-0912-C02-03

M3 - Conference contribution

AN - SCOPUS:33751051203

SN - 1558998683

SN - 9781558998681

VL - 912

SP - 59

EP - 64

BT - Doping engineering for device fabrication

PB - Materials Research Society

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 19 April 2006

ER -

Enhanced antimony activation for ultra-shallow junctions in strained silicon

Abstract

Conference

ASJC Scopus subject areas

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