Empirical determination of the electroabsorption coefficient in semiconductors

I. Galbraith, B. Ryvkin

Research output: Contribution to journalArticle

Abstract

On the basis of the integral formula of Rees relating the electroabsorption coefficient to the zero-field absorption coefficient, scaling rules for the electroabsorption coefficient are obtained. These rules allow the spectral and field dependence of the electroabsorption coefficient near the fundamental band edge to be obtained. They also allow the identification of trends, thus impacting on the choice of materials and design of optoelectronic devices.

Original languageEnglish
Pages (from-to)4145-4148
Number of pages4
JournalJournal of Applied Physics
Volume74
Issue number6
DOIs
Publication statusPublished - 1993

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coefficients
optoelectronic devices
absorptivity
trends
scaling

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title = "Empirical determination of the electroabsorption coefficient in semiconductors",
abstract = "On the basis of the integral formula of Rees relating the electroabsorption coefficient to the zero-field absorption coefficient, scaling rules for the electroabsorption coefficient are obtained. These rules allow the spectral and field dependence of the electroabsorption coefficient near the fundamental band edge to be obtained. They also allow the identification of trends, thus impacting on the choice of materials and design of optoelectronic devices.",
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Empirical determination of the electroabsorption coefficient in semiconductors. / Galbraith, I.; Ryvkin, B.

In: Journal of Applied Physics, Vol. 74, No. 6, 1993, p. 4145-4148.

Research output: Contribution to journalArticle

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AU - Ryvkin, B.

PY - 1993

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