Abstract
On the basis of the integral formula of Rees relating the electroabsorption coefficient to the zero-field absorption coefficient, scaling rules for the electroabsorption coefficient are obtained. These rules allow the spectral and field dependence of the electroabsorption coefficient near the fundamental band edge to be obtained. They also allow the identification of trends, thus impacting on the choice of materials and design of optoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 4145-4148 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 74 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1993 |