Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

P. Murzyn, C. R. Pidgeon, P. J. Phillips, J. P. Wells, N. T. Gordon, T. Ashley, J. H. Jefferson, T. M. Burke, J. Giess, M. Merrick, B. N. Murdin, C. D. Maxey

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2 Citations (Scopus)


We have made direct pump-probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 µm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, ts ~300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that ts is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of ts in non-degenerate lightly n-type Hg0.78Cd0.22Te of approximately the same band gap as InSb, and find that ts varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of ts, imply that the Elliott-Yafet model dominates in these materials. © 2003 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)220-223
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number3-4
Publication statusPublished - Jan 2004
EventProceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States
Duration: 16 Jun 200320 Jun 2003


  • Narrow-gap semiconductors
  • Optical pumping
  • Spin lifetime
  • Spin relaxation


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