Electron doping and phonon scattering in Ti1+xS2 thermoelectric compounds

M. Beaumale, T. Barbier, Y. Breard, G. Guelou, A. V. Powell, P. Vaqueiro, E. Guilmeau

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46 Citations (Scopus)

Abstract

Bulk polycrystalline samples in the series Ti1+xS2 (x = 0 to x = 0.05) were prepared using high-temperature synthesis from the elements and spark plasma sintering. X-ray structure analysis shows that the lattice constant c expands as titanium intercalates between TiS2 slabs. A Seebeck coefficient close to -300 mu V K-1 is observed for the first time in TiS2 compounds. The decrease in electrical resistivity and Seebeck coefficient that occurs upon Ti intercalation (Ti off stoichiometry) supports the view that charge carrier transfer to the Ti 3d band takes place and the carrier concentration increases. At the same time, the thermal conductivity is reduced by phonon scattering due to structural disorder induced by Ti intercalation. Optimum ZT values of 0.14 and 0.48 at 300 and 700 K, respectively, are obtained for x = 0.025. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Original languageEnglish
Pages (from-to)86-92
Number of pages7
JournalActa Materialia
Volume78
DOIs
Publication statusPublished - Oct 2014

Keywords

  • Titanium disulfide
  • Non-stoichiometry
  • Thermoelectric
  • Electrical properties
  • Thermal conductivity
  • TRANSITION-METAL DICHALCOGENIDES
  • STOICHIOMETRIC TITANIUM DISULFIDE
  • NATURE DES DEFAUTS
  • LAYER COMPOUNDS
  • BAND-STRUCTURES
  • TIS2
  • TRANSPORT
  • BULK
  • DOMAINE
  • ETENDUE

Cite this

Beaumale, M., Barbier, T., Breard, Y., Guelou, G., Powell, A. V., Vaqueiro, P., & Guilmeau, E. (2014). Electron doping and phonon scattering in Ti1+xS2 thermoelectric compounds. Acta Materialia, 78, 86-92. https://doi.org/10.1016/j.actamat.2014.06.032