Electromechanical modelling of high power RF-MEMS switches with ohmic contact

S. G. Tan, E. P. McErlean, J. S. Hong, Z. Cui, L. Wang, R. B. Greed, D. C. Voyce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper presents a study of the behaviour of electrically actuated RF-MEMS switches with ohmic contact. We will discuss about the relationship between the actuation voltage, displacement and the corresponding contact force experienced by the switch. We will demonstrate the linear behaviour of the switch when factors such as width or length of the switch arm are varied. Experimental results for DC actuation are also presented.

Original languageEnglish
Title of host publicationGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Pages505-508
Number of pages4
Volume2005
Publication statusPublished - 2005
EventGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
Duration: 3 Oct 20054 Oct 2005

Conference

ConferenceGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
CountryFrance
CityParis
Period3/10/054/10/05

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