Electromechanical modeling of high power RFMEMS switches with ohmic contact

S. G. Tan; E. P. McErlean; J. S. Hong; Z. Cui; L. Wang; R. B. Greed; D. C. Voyce

doi:10.1109/EUMC.2005.1610223

Electromechanical modeling of high power RFMEMS switches with ohmic contact

S. G. Tan, E. P. McErlean, J. S. Hong, Z. Cui, L. Wang, R. B. Greed, D. C. Voyce

School of Engineering & Physical Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

This paper presents a study of the behaviour of electrically actuated RF-MEMS switches with ohmic contact. We will discuss about the relationship between the actuation voltage, displacement and the corresponding contact force experienced by the switch. We will demonstrate the linear behaviour of the switch when factors such as width or length of the switch arm are varied. Experimental results for DC actuation are also presented.

Original language	English
Title of host publication	35th European Microwave Conference 2005 - Conference Proceedings
Pages	1451-1454
Number of pages	4
Volume	3
DOIs	https://doi.org/10.1109/EUMC.2005.1610223
Publication status	Published - 2005
Event	GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France Duration: 3 Oct 2005 → 4 Oct 2005

Conference

Conference	GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Country/Territory	France
City	Paris
Period	3/10/05 → 4/10/05

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10.1109/EUMC.2005.1610223

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@inproceedings{990b80dce6ed4274af035cad66980855,

title = "Electromechanical modeling of high power RFMEMS switches with ohmic contact",

abstract = "This paper presents a study of the behaviour of electrically actuated RF-MEMS switches with ohmic contact. We will discuss about the relationship between the actuation voltage, displacement and the corresponding contact force experienced by the switch. We will demonstrate the linear behaviour of the switch when factors such as width or length of the switch arm are varied. Experimental results for DC actuation are also presented.",

author = "Tan, {S. G.} and McErlean, {E. P.} and Hong, {J. S.} and Z. Cui and L. Wang and Greed, {R. B.} and Voyce, {D. C.}",

year = "2005",

doi = "10.1109/EUMC.2005.1610223",

language = "English",

isbn = "2960055128",

volume = "3",

pages = "1451--1454",

booktitle = "35th European Microwave Conference 2005 - Conference Proceedings",

note = "GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium ; Conference date: 03-10-2005 Through 04-10-2005",

}

Tan, SG, McErlean, EP, Hong, JS, Cui, Z, Wang, L, Greed, RB & Voyce, DC 2005, Electromechanical modeling of high power RFMEMS switches with ohmic contact. in 35th European Microwave Conference 2005 - Conference Proceedings. vol. 3, pp. 1451-1454, GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Paris, France, 3/10/05. https://doi.org/10.1109/EUMC.2005.1610223

TY - GEN

T1 - Electromechanical modeling of high power RFMEMS switches with ohmic contact

AU - Tan, S. G.

AU - McErlean, E. P.

AU - Hong, J. S.

AU - Cui, Z.

AU - Wang, L.

AU - Greed, R. B.

AU - Voyce, D. C.

PY - 2005

Y1 - 2005

N2 - This paper presents a study of the behaviour of electrically actuated RF-MEMS switches with ohmic contact. We will discuss about the relationship between the actuation voltage, displacement and the corresponding contact force experienced by the switch. We will demonstrate the linear behaviour of the switch when factors such as width or length of the switch arm are varied. Experimental results for DC actuation are also presented.

AB - This paper presents a study of the behaviour of electrically actuated RF-MEMS switches with ohmic contact. We will discuss about the relationship between the actuation voltage, displacement and the corresponding contact force experienced by the switch. We will demonstrate the linear behaviour of the switch when factors such as width or length of the switch arm are varied. Experimental results for DC actuation are also presented.

U2 - 10.1109/EUMC.2005.1610223

DO - 10.1109/EUMC.2005.1610223

M3 - Conference contribution

SN - 2960055128

SN - 9782960055122

VL - 3

SP - 1451

EP - 1454

BT - 35th European Microwave Conference 2005 - Conference Proceedings

T2 - GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Y2 - 3 October 2005 through 4 October 2005

ER -

Electromechanical modeling of high power RFMEMS switches with ohmic contact

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