Electroluminescence from Si/SiGe quantum cascade emitters

D. J. Paul; S. A. Lynch; R. Bates; Z. Ikonic; R. W. Kelsall; P. Harrison; D. J. Norris; S. L. Liew; A. G. Cullis; P. Murzyn; C. Pidgeon; D. D. Arnone; D. J. Robbins

doi:10.1016/S1386-9477(02)00689-6

Electroluminescence from Si/SiGe quantum cascade emitters

D. J. Paul, S. A. Lynch, R. Bates, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, S. L. Liew, A. G. Cullis, P. Murzyn, C. Pidgeon, D. D. Arnone, D. J. Robbins

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ~20 ps between 4 and 150 K. © 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	309-314
Number of pages	6
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	16
Issue number	3-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00689-6
Publication status	Published - Mar 2003
Event	Symposium H of the Spring Meeting of the Europe (E-MRS-02H) - Strasbourgh, France Duration: 18 Jun 2002 → 21 Jun 2002

Keywords

Intersubband electroluminescence
Quantum cascade emitters
Si/SiGe

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10.1016/S1386-9477(02)00689-6

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title = "Electroluminescence from Si/SiGe quantum cascade emitters",

abstract = "Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ~20 ps between 4 and 150 K. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.",

keywords = "Intersubband electroluminescence, Quantum cascade emitters, Si/SiGe",

author = "Paul, {D. J.} and Lynch, {S. A.} and R. Bates and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Norris, {D. J.} and Liew, {S. L.} and Cullis, {A. G.} and P. Murzyn and C. Pidgeon and Arnone, {D. D.} and Robbins, {D. J.}",

year = "2003",

month = mar,

doi = "10.1016/S1386-9477(02)00689-6",

language = "English",

volume = "16",

pages = "309--314",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "3-4",

note = "Symposium H of the Spring Meeting of the Europe (E-MRS-02H) ; Conference date: 18-06-2002 Through 21-06-2002",

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TY - JOUR

T1 - Electroluminescence from Si/SiGe quantum cascade emitters

AU - Paul, D. J.

AU - Lynch, S. A.

AU - Bates, R.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Norris, D. J.

AU - Liew, S. L.

AU - Cullis, A. G.

AU - Murzyn, P.

AU - Pidgeon, C.

AU - Arnone, D. D.

AU - Robbins, D. J.

PY - 2003/3

Y1 - 2003/3

N2 - Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ~20 ps between 4 and 150 K. © 2002 Elsevier Science B.V. All rights reserved.

AB - Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ~20 ps between 4 and 150 K. © 2002 Elsevier Science B.V. All rights reserved.

KW - Intersubband electroluminescence

KW - Quantum cascade emitters

KW - Si/SiGe

UR - http://www.scopus.com/inward/record.url?scp=0037371999&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00689-6

DO - 10.1016/S1386-9477(02)00689-6

M3 - Article

SN - 1386-9477

VL - 16

SP - 309

EP - 314

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4

T2 - Symposium H of the Spring Meeting of the Europe (E-MRS-02H)

Y2 - 18 June 2002 through 21 June 2002

ER -

Electroluminescence from Si/SiGe quantum cascade emitters

Abstract

Keywords

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