Electrochemical capacitance-voltage profiling of n-type ZnSe

S. Y. Wang, J. Simpson, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

In this article we report the first detailed study of electrochemical capacitance-voltage profiling of ZnSe. An electrolyte consisting of 1 M sodium hydroxide and 1 M sodium sulphite has been developed that does not deposit selenium while etching the surface of n-type ZnSe during C-V profiling. The dissolution number of the electrolyte/ZnSe system is a function of the strength of electrolyte and the etching current and in order to obtain an accurate etching depth a constant etching current mode was used. A wide range of doping concentrations including both uniformly doped and staircase structures have been measured demonstrating that the electrochemical C-V profiler can now be a routine tool for assessing the growth parameters of ZnSe.

Original languageEnglish
Pages (from-to)5311-5317
Number of pages7
JournalJournal of Applied Physics
Volume72
Issue number11
DOIs
Publication statusPublished - 1992

Fingerprint Dive into the research topics of 'Electrochemical capacitance-voltage profiling of n-type ZnSe'. Together they form a unique fingerprint.

  • Cite this

    Wang, S. Y., Simpson, J., Prior, K. A., & Cavenett, B. C. (1992). Electrochemical capacitance-voltage profiling of n-type ZnSe. Journal of Applied Physics, 72(11), 5311-5317. https://doi.org/10.1063/1.352016