Electrochemical capacitance-voltage profiling of n-type molecular beam epitaxy ZnSe layers

We report the use of electrochemical capacitance-voltage profiling of n-type ZnSe layers by the use of NaOH electrolyte. Samples with both uniform and staircase doping profiles have been measured with concentrations ranging over 10¹⁶-10¹⁹ cm^-3. The profiling technique has revealed in some samples regions of lower carrier concentration at the surface and at the ZnSe/GaAs interface. Our results demonstrate that this powerful technique can now be used for assessing the growth parameters of wideband gap II-VI materials in the same way that is widely accepted for III-V semiconductors.