Electrochemical capacitance-voltage profiling of n-type molecular beam epitaxy ZnSe layers

S. Y. Wang; Frank Haran; J. Simpson; H. Stewart; J. M. Wallace; K. A. Prior; B. C. Cavenett

doi:10.1063/1.107463

Electrochemical capacitance-voltage profiling of n-type molecular beam epitaxy ZnSe layers

S. Y. Wang, Frank Haran, J. Simpson, H. Stewart, J. M. Wallace, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report the use of electrochemical capacitance-voltage profiling of n-type ZnSe layers by the use of NaOH electrolyte. Samples with both uniform and staircase doping profiles have been measured with concentrations ranging over 10¹⁶-10¹⁹ cm^-3. The profiling technique has revealed in some samples regions of lower carrier concentration at the surface and at the ZnSe/GaAs interface. Our results demonstrate that this powerful technique can now be used for assessing the growth parameters of wideband gap II-VI materials in the same way that is widely accepted for III-V semiconductors.

Original language	English
Pages (from-to)	344-346
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	3
DOIs	https://doi.org/10.1063/1.107463
Publication status	Published - 1992

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10.1063/1.107463

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title = "Electrochemical capacitance-voltage profiling of n-type molecular beam epitaxy ZnSe layers",

abstract = "We report the use of electrochemical capacitance-voltage profiling of n-type ZnSe layers by the use of NaOH electrolyte. Samples with both uniform and staircase doping profiles have been measured with concentrations ranging over 1016-1019 cm-3. The profiling technique has revealed in some samples regions of lower carrier concentration at the surface and at the ZnSe/GaAs interface. Our results demonstrate that this powerful technique can now be used for assessing the growth parameters of wideband gap II-VI materials in the same way that is widely accepted for III-V semiconductors.",

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AU - Wang, S. Y.

AU - Haran, Frank

AU - Simpson, J.

AU - Stewart, H.

AU - Wallace, J. M.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1992

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N2 - We report the use of electrochemical capacitance-voltage profiling of n-type ZnSe layers by the use of NaOH electrolyte. Samples with both uniform and staircase doping profiles have been measured with concentrations ranging over 1016-1019 cm-3. The profiling technique has revealed in some samples regions of lower carrier concentration at the surface and at the ZnSe/GaAs interface. Our results demonstrate that this powerful technique can now be used for assessing the growth parameters of wideband gap II-VI materials in the same way that is widely accepted for III-V semiconductors.

AB - We report the use of electrochemical capacitance-voltage profiling of n-type ZnSe layers by the use of NaOH electrolyte. Samples with both uniform and staircase doping profiles have been measured with concentrations ranging over 1016-1019 cm-3. The profiling technique has revealed in some samples regions of lower carrier concentration at the surface and at the ZnSe/GaAs interface. Our results demonstrate that this powerful technique can now be used for assessing the growth parameters of wideband gap II-VI materials in the same way that is widely accepted for III-V semiconductors.

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Electrochemical capacitance-voltage profiling of n-type molecular beam epitaxy ZnSe layers

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