Electrochemical capacitance-voltage profiling of n-type molecular beam epitaxy ZnSe layers

S. Y. Wang, Frank Haran, J. Simpson, H. Stewart, J. M. Wallace, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

We report the use of electrochemical capacitance-voltage profiling of n-type ZnSe layers by the use of NaOH electrolyte. Samples with both uniform and staircase doping profiles have been measured with concentrations ranging over 1016-1019 cm-3. The profiling technique has revealed in some samples regions of lower carrier concentration at the surface and at the ZnSe/GaAs interface. Our results demonstrate that this powerful technique can now be used for assessing the growth parameters of wideband gap II-VI materials in the same way that is widely accepted for III-V semiconductors.

Original languageEnglish
Pages (from-to)344-346
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number3
DOIs
Publication statusPublished - 1992

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    Wang, S. Y., Haran, F., Simpson, J., Stewart, H., Wallace, J. M., Prior, K. A., & Cavenett, B. C. (1992). Electrochemical capacitance-voltage profiling of n-type molecular beam epitaxy ZnSe layers. Applied Physics Letters, 60(3), 344-346. https://doi.org/10.1063/1.107463