Abstract
We report the use of electrochemical capacitance-voltage profiling of n-type ZnSe layers by the use of NaOH electrolyte. Samples with both uniform and staircase doping profiles have been measured with concentrations ranging over 1016-1019 cm-3. The profiling technique has revealed in some samples regions of lower carrier concentration at the surface and at the ZnSe/GaAs interface. Our results demonstrate that this powerful technique can now be used for assessing the growth parameters of wideband gap II-VI materials in the same way that is widely accepted for III-V semiconductors.
Original language | English |
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Pages (from-to) | 344-346 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 60 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1992 |