Electrochemical Behavior of Ferrosilicides (FexSi) in Neutral and Alkaline Aqueous Electrolytes III. The Nature of Passive Films on FexSi Electrodes

G. H. Kelsall; Richard A. Williams

doi:10.1149/1.2085752

Electrochemical Behavior of Ferrosilicides (FexSi) in Neutral and Alkaline Aqueous Electrolytes III. The Nature of Passive Films on FexSi Electrodes

G. H. Kelsall, Richard A. Williams

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The nature of passive films on oxidized ferrosilicide (Fe.r-Si) alloy electrodes has been studied as a function of alloy composition [0-30 mass percent (m/o) Si] in deoxygenated borate and phthalate buffers using photocurrent spectroscopy, impedance, and x-ray photoelectron spectroscopy (XPS). Passivation was shown to be due to a silica containing Fe(III) oxide film, exhibiting n-type semiconducting properties with a bandgap of 1.9-2.02 eV, for 0-15.8 m/o Si ferrosilicon alloy compositions. The photoelectrochemical and XPS results showed clear evidence of overgrowth by silica, thus explaining the superior corrosion resistance of ferrosilicides compared with iron. No boron species were found to be incorporated in the oxide film.

Original language	English
Pages (from-to)	951-957
Number of pages	7
Journal	Journal of The Electrochemical Society
Volume	138
Issue number	4
DOIs	https://doi.org/10.1149/1.2085752
Publication status	Published - 1991

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Surfaces, Coatings and Films
Materials Chemistry
Electrochemistry

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abstract = "The nature of passive films on oxidized ferrosilicide (Fe.r-Si) alloy electrodes has been studied as a function of alloy composition [0-30 mass percent (m/o) Si] in deoxygenated borate and phthalate buffers using photocurrent spectroscopy, impedance, and x-ray photoelectron spectroscopy (XPS). Passivation was shown to be due to a silica containing Fe(III) oxide film, exhibiting n-type semiconducting properties with a bandgap of 1.9-2.02 eV, for 0-15.8 m/o Si ferrosilicon alloy compositions. The photoelectrochemical and XPS results showed clear evidence of overgrowth by silica, thus explaining the superior corrosion resistance of ferrosilicides compared with iron. No boron species were found to be incorporated in the oxide film.",

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N2 - The nature of passive films on oxidized ferrosilicide (Fe.r-Si) alloy electrodes has been studied as a function of alloy composition [0-30 mass percent (m/o) Si] in deoxygenated borate and phthalate buffers using photocurrent spectroscopy, impedance, and x-ray photoelectron spectroscopy (XPS). Passivation was shown to be due to a silica containing Fe(III) oxide film, exhibiting n-type semiconducting properties with a bandgap of 1.9-2.02 eV, for 0-15.8 m/o Si ferrosilicon alloy compositions. The photoelectrochemical and XPS results showed clear evidence of overgrowth by silica, thus explaining the superior corrosion resistance of ferrosilicides compared with iron. No boron species were found to be incorporated in the oxide film.

AB - The nature of passive films on oxidized ferrosilicide (Fe.r-Si) alloy electrodes has been studied as a function of alloy composition [0-30 mass percent (m/o) Si] in deoxygenated borate and phthalate buffers using photocurrent spectroscopy, impedance, and x-ray photoelectron spectroscopy (XPS). Passivation was shown to be due to a silica containing Fe(III) oxide film, exhibiting n-type semiconducting properties with a bandgap of 1.9-2.02 eV, for 0-15.8 m/o Si ferrosilicon alloy compositions. The photoelectrochemical and XPS results showed clear evidence of overgrowth by silica, thus explaining the superior corrosion resistance of ferrosilicides compared with iron. No boron species were found to be incorporated in the oxide film.

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Electrochemical Behavior of Ferrosilicides (FexSi) in Neutral and Alkaline Aqueous Electrolytes III. The Nature of Passive Films on FexSi Electrodes

Abstract

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