Abstract
We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (approximate to-0.22 meV/MPa) leads to variable tuning of exciton energies (+18 to -0.9 mu eV/MPa) under tensile stress. Modest tuning of the permanent dipole, Coulomb interaction and fine-structure splitting energies is also measured. We exploit the variable exciton response to tune multiple quantum dots on the same chip into resonance.
| Original language | English |
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| Pages (from-to) | 3761-3765 |
| Number of pages | 5 |
| Journal | Nano Letters |
| Volume | 12 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 2012 |