TY - JOUR
T1 - Electrical test structure for the measurement of hermeticity in electronic and MEMS packages with small cavity volumes
AU - Costello, Suzanne
AU - Desmulliez, Marc Phillipe Yves
AU - McCracken, S
AU - Abraham, Eitan
AU - Lowrie, Craig
AU - Cargill, Scott
N1 - INSPEC Accession Number: 13685950
PY - 2013/8
Y1 - 2013/8
N2 - In this paper we present the first world realisation of a novel electromechanical sensor for the detection of hermeticity in low-cavity-volume packages. We designed, fabricated, and characterised this test structure. Its core element is a 0-level silicon cap acting as a piezoresistive deflecting membrane. The hermeticity of the package can then be determined in real-time. Low leak rates can be measured with a sensitivity two orders of magnitude lower than the limit of traditional helium fine leak test. Abraham’s contribution: development of theoretical model to calculate the voltage created by piezoresistors deposited on a square membrane
AB - In this paper we present the first world realisation of a novel electromechanical sensor for the detection of hermeticity in low-cavity-volume packages. We designed, fabricated, and characterised this test structure. Its core element is a 0-level silicon cap acting as a piezoresistive deflecting membrane. The hermeticity of the package can then be determined in real-time. Low leak rates can be measured with a sensitivity two orders of magnitude lower than the limit of traditional helium fine leak test. Abraham’s contribution: development of theoretical model to calculate the voltage created by piezoresistors deposited on a square membrane
U2 - 10.1109/TSM.2013.2271213
DO - 10.1109/TSM.2013.2271213
M3 - Article
SN - 0894-6507
VL - 26
SP - 281
EP - 287
JO - IEEE Transactions on Semiconductor Manufacturing
JF - IEEE Transactions on Semiconductor Manufacturing
IS - 3
ER -