Electrical conduction in zinc phosphide thin films

R. Sathyamoorthy; C. Sharmila; P. Sudhagar; S. Chandramohan; S. Velumani

doi:10.1016/j.matchar.2006.11.014

Electrical conduction in zinc phosphide thin films

R. Sathyamoorthy^*, C. Sharmila, P. Sudhagar, S. Chandramohan, S. Velumani

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Zinc Phosphide (Zn₃P₂) films were deposited by vacuum evaporation under a pressure of 1.3 × 10^{- 5} m bar onto well-cleaned glass substrates. I-V measurements show Ohmic and non-ohmic behavior for lower and higher fields, respectively. The field-lowering coefficient was calculated theoretically and experimentally and it was found that the possible conduction mechanism in these films is Richardson-Schottky type. The activation energy decreases as the voltage increases. The zero-field activation energy was found to be 0.97 eV and this zero field activation energy decreases with an increase in film thickness. The capacitance measurements were made at room temperature. The flat band potential was found to be ∼ 1.5 V. The ionized charge density and the total number of interface states were calculated and the values were found to be 5.30 × 10¹⁶/cm³ and 4.18 × 10¹⁷ cm^{- 2} eV^{- 1} respectively.

Original language	English
Pages (from-to)	730-734
Number of pages	5
Journal	Materials Characterization
Volume	58
Issue number	8-9
DOIs	https://doi.org/10.1016/j.matchar.2006.11.014
Publication status	Published - Aug 2007

Keywords

C-V characteristics
Electrical conduction
Richardson Schottky mechanism
Vacuum evaporation
ZnP thin films

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matchar.2006.11.014

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title = "Electrical conduction in zinc phosphide thin films",

abstract = "Zinc Phosphide (Zn3P2) films were deposited by vacuum evaporation under a pressure of 1.3 × 10- 5 m bar onto well-cleaned glass substrates. I-V measurements show Ohmic and non-ohmic behavior for lower and higher fields, respectively. The field-lowering coefficient was calculated theoretically and experimentally and it was found that the possible conduction mechanism in these films is Richardson-Schottky type. The activation energy decreases as the voltage increases. The zero-field activation energy was found to be 0.97 eV and this zero field activation energy decreases with an increase in film thickness. The capacitance measurements were made at room temperature. The flat band potential was found to be ∼ 1.5 V. The ionized charge density and the total number of interface states were calculated and the values were found to be 5.30 × 1016/cm3 and 4.18 × 1017 cm- 2 eV- 1 respectively.",

keywords = "C-V characteristics, Electrical conduction, Richardson Schottky mechanism, Vacuum evaporation, ZnP thin films",

author = "R. Sathyamoorthy and C. Sharmila and P. Sudhagar and S. Chandramohan and S. Velumani",

note = "Funding Information: The authors wish to acknowledge the Secretary and the Management of Kongunadu Arts and Science College, Coimbatore for their encouragement and support to carry out this work. One of the authors (RS) wishes to acknowledge University Grants Commission, New Delhi for a UGC Research Award to carry out this work.",

year = "2007",

month = aug,

doi = "10.1016/j.matchar.2006.11.014",

language = "English",

volume = "58",

pages = "730--734",

journal = "Materials Characterization",

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T1 - Electrical conduction in zinc phosphide thin films

AU - Sathyamoorthy, R.

AU - Sharmila, C.

AU - Sudhagar, P.

AU - Chandramohan, S.

AU - Velumani, S.

N1 - Funding Information: The authors wish to acknowledge the Secretary and the Management of Kongunadu Arts and Science College, Coimbatore for their encouragement and support to carry out this work. One of the authors (RS) wishes to acknowledge University Grants Commission, New Delhi for a UGC Research Award to carry out this work.

PY - 2007/8

Y1 - 2007/8

N2 - Zinc Phosphide (Zn3P2) films were deposited by vacuum evaporation under a pressure of 1.3 × 10- 5 m bar onto well-cleaned glass substrates. I-V measurements show Ohmic and non-ohmic behavior for lower and higher fields, respectively. The field-lowering coefficient was calculated theoretically and experimentally and it was found that the possible conduction mechanism in these films is Richardson-Schottky type. The activation energy decreases as the voltage increases. The zero-field activation energy was found to be 0.97 eV and this zero field activation energy decreases with an increase in film thickness. The capacitance measurements were made at room temperature. The flat band potential was found to be ∼ 1.5 V. The ionized charge density and the total number of interface states were calculated and the values were found to be 5.30 × 1016/cm3 and 4.18 × 1017 cm- 2 eV- 1 respectively.

AB - Zinc Phosphide (Zn3P2) films were deposited by vacuum evaporation under a pressure of 1.3 × 10- 5 m bar onto well-cleaned glass substrates. I-V measurements show Ohmic and non-ohmic behavior for lower and higher fields, respectively. The field-lowering coefficient was calculated theoretically and experimentally and it was found that the possible conduction mechanism in these films is Richardson-Schottky type. The activation energy decreases as the voltage increases. The zero-field activation energy was found to be 0.97 eV and this zero field activation energy decreases with an increase in film thickness. The capacitance measurements were made at room temperature. The flat band potential was found to be ∼ 1.5 V. The ionized charge density and the total number of interface states were calculated and the values were found to be 5.30 × 1016/cm3 and 4.18 × 1017 cm- 2 eV- 1 respectively.

KW - C-V characteristics

KW - Electrical conduction

KW - Richardson Schottky mechanism

KW - Vacuum evaporation

KW - ZnP thin films

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DO - 10.1016/j.matchar.2006.11.014

M3 - Article

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SN - 1044-5803

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SP - 730

EP - 734

JO - Materials Characterization

JF - Materials Characterization

IS - 8-9

ER -

Electrical conduction in zinc phosphide thin films

Abstract

Keywords

ASJC Scopus subject areas

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