Electrical characterization of iodine doped molecular beam epitaxial ZnSe

J. M. Wallace, J. Simpson, S. Y. Wang, H. Stewart, J. J. Hunter, S. J A Adams, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy (MBE) over a range of carrier concentrations from 1016 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and calibrated in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well behaved n-type ZnSe. © 1992.

Original languageEnglish
Pages (from-to)320-323
Number of pages4
JournalJournal of Crystal Growth
Volume117
Issue number1-4
Publication statusPublished - 2 Feb 1992

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    Wallace, J. M., Simpson, J., Wang, S. Y., Stewart, H., Hunter, J. J., Adams, S. J. A., Prior, K. A., & Cavenett, B. C. (1992). Electrical characterization of iodine doped molecular beam epitaxial ZnSe. Journal of Crystal Growth, 117(1-4), 320-323.