Electrical characterization of iodine doped molecular beam epitaxial ZnSe

J. M. Wallace; J. Simpson; S. Y. Wang; H. Stewart; J. J. Hunter; S. J A Adams; K. A. Prior; B. C. Cavenett

Electrical characterization of iodine doped molecular beam epitaxial ZnSe

J. M. Wallace, J. Simpson, S. Y. Wang, H. Stewart, J. J. Hunter, S. J A Adams, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy (MBE) over a range of carrier concentrations from 10¹⁶ to 10¹⁹ cm^-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and calibrated in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well behaved n-type ZnSe. © 1992.

Original language	English
Pages (from-to)	320-323
Number of pages	4
Journal	Journal of Crystal Growth
Volume	117
Issue number	1-4
Publication status	Published - 2 Feb 1992

Cite this

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title = "Electrical characterization of iodine doped molecular beam epitaxial ZnSe",

abstract = "We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy (MBE) over a range of carrier concentrations from 1016 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and calibrated in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well behaved n-type ZnSe. {\textcopyright} 1992.",

author = "Wallace, {J. M.} and J. Simpson and Wang, {S. Y.} and H. Stewart and Hunter, {J. J.} and Adams, {S. J A} and Prior, {K. A.} and Cavenett, {B. C.}",

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language = "English",

volume = "117",

pages = "320--323",

journal = "Journal of Crystal Growth",

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T1 - Electrical characterization of iodine doped molecular beam epitaxial ZnSe

AU - Wallace, J. M.

AU - Simpson, J.

AU - Wang, S. Y.

AU - Stewart, H.

AU - Hunter, J. J.

AU - Adams, S. J A

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1992/2/2

Y1 - 1992/2/2

N2 - We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy (MBE) over a range of carrier concentrations from 1016 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and calibrated in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well behaved n-type ZnSe. © 1992.

AB - We report the use of an electrochemical iodine cell to dope epitaxial ZnSe grown by molecular beam epitaxy (MBE) over a range of carrier concentrations from 1016 to 1019 cm-3. The doping levels throughout the layers have been measured by electrochemical CV profiling and calibrated in terms of the cell flux. Photoluminescence and Hall data confirm the growth of well behaved n-type ZnSe. © 1992.

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M3 - Article

SN - 0022-0248

VL - 117

SP - 320

EP - 323

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Electrical characterization of iodine doped molecular beam epitaxial ZnSe

Abstract

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