The doping properties of nitrogen in ZNSe to produce p-type material have been explored by photo-assisted molecular beam epitaxy. These prelimiNAry results show that changes in NA - ND with ultraviolet irradiation are due to the effect of the laser on the selenium aND so far no primary photoeffect has been observed. Photoluminescence measurements on the ZNSe:N layers show the presence of a second donor-acceptor pair recombination due to deep donors that has been assigned to VSe-NSe pairs. The change in carrier concentration profile with time for ZNSe:N supports the involvement of a NAtive defect in the compensation process. ZnCdSe/ZNSe quantum well laser diodes have been fabricated showing blue emission at 475 nm. © 1993 The Mineral,Metal & Materials Society,Inc.
- Blue emission
- quantum well laser diodes