Electrical and optical characterization of p-type ZNSe for diode laser structures

J. Simpson, S. Y. Wang, H. Stewart, J. Wallace, S. J A Adams, I. Hauksson, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

The doping properties of nitrogen in ZNSe to produce p-type material have been explored by photo-assisted molecular beam epitaxy. These prelimiNAry results show that changes in NA - ND with ultraviolet irradiation are due to the effect of the laser on the selenium aND so far no primary photoeffect has been observed. Photoluminescence measurements on the ZNSe:N layers show the presence of a second donor-acceptor pair recombination due to deep donors that has been assigned to VSe-NSe pairs. The change in carrier concentration profile with time for ZNSe:N supports the involvement of a NAtive defect in the compensation process. ZnCdSe/ZNSe quantum well laser diodes have been fabricated showing blue emission at 475 nm. © 1993 The Mineral,Metal & Materials Society,Inc.

Original languageEnglish
Pages (from-to)431-435
Number of pages5
JournalJournal of Electronic Materials
Volume22
Issue number5
DOIs
Publication statusPublished - May 1993

Keywords

  • Blue emission
  • quantum well laser diodes
  • ZnCdSe/ZnSe
  • ZNSe

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    Simpson, J., Wang, S. Y., Stewart, H., Wallace, J., Adams, S. J. A., Hauksson, I., Prior, K. A., & Cavenett, B. C. (1993). Electrical and optical characterization of p-type ZNSe for diode laser structures. Journal of Electronic Materials, 22(5), 431-435. https://doi.org/10.1007/BF02661608