Electrical and optical characterization of p-type ZNSe for diode laser structures

J. Simpson; S. Y. Wang; H. Stewart; J. Wallace; S. J A Adams; I. Hauksson; K. A. Prior; B. C. Cavenett

doi:10.1007/BF02661608

Electrical and optical characterization of p-type ZNSe for diode laser structures

J. Simpson, S. Y. Wang, H. Stewart, J. Wallace, S. J A Adams, I. Hauksson, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The doping properties of nitrogen in ZNSe to produce p-type material have been explored by photo-assisted molecular beam epitaxy. These prelimiN_Ary results show that changes in N_A - N_D with ultraviolet irradiation are due to the effect of the laser on the selenium aN_D so far no primary photoeffect has been observed. Photoluminescence measurements on the ZNSe:N layers show the presence of a second donor-acceptor pair recombination due to deep donors that has been assigned to V_Se-N_Se pairs. The change in carrier concentration profile with time for ZNSe:N supports the involvement of a N_Ative defect in the compensation process. ZnCdSe/ZNSe quantum well laser diodes have been fabricated showing blue emission at 475 nm. © 1993 The Mineral,Metal & Materials Society,Inc.

Original language	English
Pages (from-to)	431-435
Number of pages	5
Journal	Journal of Electronic Materials
Volume	22
Issue number	5
DOIs	https://doi.org/10.1007/BF02661608
Publication status	Published - May 1993

Keywords

Blue emission
quantum well laser diodes
ZnCdSe/ZnSe
ZNSe

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10.1007/BF02661608

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title = "Electrical and optical characterization of p-type ZNSe for diode laser structures",

abstract = "The doping properties of nitrogen in ZNSe to produce p-type material have been explored by photo-assisted molecular beam epitaxy. These prelimiNAry results show that changes in NA - ND with ultraviolet irradiation are due to the effect of the laser on the selenium aND so far no primary photoeffect has been observed. Photoluminescence measurements on the ZNSe:N layers show the presence of a second donor-acceptor pair recombination due to deep donors that has been assigned to VSe-NSe pairs. The change in carrier concentration profile with time for ZNSe:N supports the involvement of a NAtive defect in the compensation process. ZnCdSe/ZNSe quantum well laser diodes have been fabricated showing blue emission at 475 nm. {\textcopyright} 1993 The Mineral,Metal & Materials Society,Inc.",

keywords = "Blue emission, quantum well laser diodes, ZnCdSe/ZnSe, ZNSe",

author = "J. Simpson and Wang, {S. Y.} and H. Stewart and J. Wallace and Adams, {S. J A} and I. Hauksson and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1993",

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T1 - Electrical and optical characterization of p-type ZNSe for diode laser structures

AU - Simpson, J.

AU - Wang, S. Y.

AU - Stewart, H.

AU - Wallace, J.

AU - Adams, S. J A

AU - Hauksson, I.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1993/5

Y1 - 1993/5

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KW - Blue emission

KW - quantum well laser diodes

KW - ZnCdSe/ZnSe

KW - ZNSe

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Electrical and optical characterization of p-type ZNSe for diode laser structures

Abstract

Keywords

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