Efficient thermoelectric performance in silicon nano-films by vacancy-engineering

Nick S. Bennett; Neil M. Wight; Srinivasa R. Popuri; Jan Willem G Bos

doi:10.1016/j.nanoen.2015.07.007

Efficient thermoelectric performance in silicon nano-films by vacancy-engineering

Nick S. Bennett^*
, Neil M. Wight
, Srinivasa R. Popuri
, Jan Willem G Bos

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

151 Downloads (Pure)

Abstract

The introduction of large concentrations of lattice vacancies in silicon nano-films creates more than a 20-fold reduction in thermal conductivity, while electrical conductivity and Seebeck coefficient are largely maintained. This results in thermoelectric performance comparable to silicon nanowires, but crucially leaves the silicon structure indistinguishable from bulk silicon, resulting in a robust material that is straight-forward to fabricate. This finding significantly advances the potential of silicon ultra-thin-films as a high-performance thermoelectric material.

Original language	English
Pages (from-to)	350-356
Number of pages	7
Journal	Nano Energy
Volume	16
DOIs	https://doi.org/10.1016/j.nanoen.2015.07.007
Publication status	Published - 1 Sept 2015

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Nano-film
Silicon
Thermal conductivity
Thermoelectric
Vacancy

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
General Materials Science
Electrical and Electronic Engineering

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10.1016/j.nanoen.2015.07.007

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abstract = "The introduction of large concentrations of lattice vacancies in silicon nano-films creates more than a 20-fold reduction in thermal conductivity, while electrical conductivity and Seebeck coefficient are largely maintained. This results in thermoelectric performance comparable to silicon nanowires, but crucially leaves the silicon structure indistinguishable from bulk silicon, resulting in a robust material that is straight-forward to fabricate. This finding significantly advances the potential of silicon ultra-thin-films as a high-performance thermoelectric material.",

keywords = "Nano-film, Silicon, Thermal conductivity, Thermoelectric, Vacancy",

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AU - Wight, Neil M.

AU - Popuri, Srinivasa R.

AU - Bos, Jan Willem G

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The introduction of large concentrations of lattice vacancies in silicon nano-films creates more than a 20-fold reduction in thermal conductivity, while electrical conductivity and Seebeck coefficient are largely maintained. This results in thermoelectric performance comparable to silicon nanowires, but crucially leaves the silicon structure indistinguishable from bulk silicon, resulting in a robust material that is straight-forward to fabricate. This finding significantly advances the potential of silicon ultra-thin-films as a high-performance thermoelectric material.

AB - The introduction of large concentrations of lattice vacancies in silicon nano-films creates more than a 20-fold reduction in thermal conductivity, while electrical conductivity and Seebeck coefficient are largely maintained. This results in thermoelectric performance comparable to silicon nanowires, but crucially leaves the silicon structure indistinguishable from bulk silicon, resulting in a robust material that is straight-forward to fabricate. This finding significantly advances the potential of silicon ultra-thin-films as a high-performance thermoelectric material.

KW - Nano-film

KW - Silicon

KW - Thermal conductivity

KW - Thermoelectric

KW - Vacancy

UR - https://www.scopus.com/pages/publications/84938089473

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M3 - Article

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VL - 16

SP - 350

EP - 356

JO - Nano Energy

JF - Nano Energy

ER -

Efficient thermoelectric performance in silicon nano-films by vacancy-engineering

Abstract

UN SDGs

Keywords

ASJC Scopus subject areas

Access to Document

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