Effects of UV laser irradiation on the growth of nitrogen-doped p-type ZnSe

J. Simpson, S. Y. Wang, I. Hauksson, H. Stewart, S. J A Adams, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

Photoassisted p-type doping of ZnSe has been performed for the first time using active nitrogen doping and UV laser illumination of the growth surface. Above band-gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen-doped ZnSe. © 1993.

Original languageEnglish
Pages (from-to)327-330
Number of pages4
JournalJournal of Crystal Growth
Volume127
Issue number1-4
Publication statusPublished - 2 Feb 1993

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    Simpson, J., Wang, S. Y., Hauksson, I., Stewart, H., Adams, S. J. A., Prior, K. A., & Cavenett, B. C. (1993). Effects of UV laser irradiation on the growth of nitrogen-doped p-type ZnSe. Journal of Crystal Growth, 127(1-4), 327-330.