Photoassisted p-type doping of ZnSe has been performed for the first time using active nitrogen doping and UV laser illumination of the growth surface. Above band-gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen-doped ZnSe. © 1993.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 2 Feb 1993|