Effects of UV laser irradiation on the growth of nitrogen-doped p-type ZnSe

J. Simpson; S. Y. Wang; I. Hauksson; H. Stewart; S. J A Adams; K. A. Prior; B. C. Cavenett

Effects of UV laser irradiation on the growth of nitrogen-doped p-type ZnSe

J. Simpson, S. Y. Wang, I. Hauksson, H. Stewart, S. J A Adams, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Photoassisted p-type doping of ZnSe has been performed for the first time using active nitrogen doping and UV laser illumination of the growth surface. Above band-gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (N_A - N_D) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen-doped ZnSe. © 1993.

Original language	English
Pages (from-to)	327-330
Number of pages	4
Journal	Journal of Crystal Growth
Volume	127
Issue number	1-4
Publication status	Published - 2 Feb 1993

Cite this

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title = "Effects of UV laser irradiation on the growth of nitrogen-doped p-type ZnSe",

abstract = "Photoassisted p-type doping of ZnSe has been performed for the first time using active nitrogen doping and UV laser illumination of the growth surface. Above band-gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen-doped ZnSe. {\textcopyright} 1993.",

author = "J. Simpson and Wang, {S. Y.} and I. Hauksson and H. Stewart and Adams, {S. J A} and Prior, {K. A.} and Cavenett, {B. C.}",

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T1 - Effects of UV laser irradiation on the growth of nitrogen-doped p-type ZnSe

AU - Simpson, J.

AU - Wang, S. Y.

AU - Hauksson, I.

AU - Stewart, H.

AU - Adams, S. J A

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - Photoassisted p-type doping of ZnSe has been performed for the first time using active nitrogen doping and UV laser illumination of the growth surface. Above band-gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen-doped ZnSe. © 1993.

AB - Photoassisted p-type doping of ZnSe has been performed for the first time using active nitrogen doping and UV laser illumination of the growth surface. Above band-gap irradiation during growth results in a decrease in Se coverage, as is the case for n-type and undoped material, and this decrease in Se coverage allows higher nitrogen incorporation rates, although changes in (NA - ND) are relatively small at 280°C. From photoluminescence data we have identified the existence of a deep donor responsible for compensation in nitrogen-doped ZnSe. © 1993.

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M3 - Article

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VL - 127

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Effects of UV laser irradiation on the growth of nitrogen-doped p-type ZnSe

Abstract

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