Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se2 solar cell

Dowon Bae; Junghwan Gho; Minjung Shin; Sehan Kwon

doi:10.1016/j.tsf.2012.11.077

Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se₂ solar cell

Dowon Bae^*, Junghwan Gho, Minjung Shin, Sehan Kwon

^*Corresponding author for this work

LG Innotek

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Cd_{(1 - x)}Zn_xS (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se₂ (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth.

Original language	English
Pages (from-to)	162-165
Number of pages	4
Journal	Thin Solid Films
Volume	535
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2012.11.077
Publication status	Published - 15 May 2013

Keywords

Buffer layer
Cadmium sulfide
CdZnS
Chemical bath deposition
CIGS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2012.11.077

Cite this

@article{2a361bc4710946c284f0f047bd1f5557,

title = "Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se2 solar cell",

abstract = "Cd(1 - x)ZnxS (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se2 (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth.",

keywords = "Buffer layer, Cadmium sulfide, CdZnS, Chemical bath deposition, CIGS",

author = "Dowon Bae and Junghwan Gho and Minjung Shin and Sehan Kwon",

year = "2013",

month = may,

day = "15",

doi = "10.1016/j.tsf.2012.11.077",

language = "English",

volume = "535",

pages = "162--165",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se2 solar cell

AU - Bae, Dowon

AU - Gho, Junghwan

AU - Shin, Minjung

AU - Kwon, Sehan

PY - 2013/5/15

Y1 - 2013/5/15

N2 - Cd(1 - x)ZnxS (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se2 (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth.

AB - Cd(1 - x)ZnxS (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se2 (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth.

KW - Buffer layer

KW - Cadmium sulfide

KW - CdZnS

KW - Chemical bath deposition

KW - CIGS

UR - http://www.scopus.com/inward/record.url?scp=84878174822&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.11.077

DO - 10.1016/j.tsf.2012.11.077

M3 - Article

AN - SCOPUS:84878174822

SN - 0040-6090

VL - 535

SP - 162

EP - 165

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -