Abstract
This study reports on the behaviour of the thermoelectric properties of n- and p-type hydrogenated microcrystalline silicon thin films (µc-Si: H) as a function of applied uniaxial stress up to ±1.7%. µc-Si: H thin films were deposited via plasma enhanced chemical vapour deposition and thermoelectric properties were obtained through annealing at 200 °C (350 °C) for n-(p-) type samples, before the bending experiments. Tensile (compressive) stress was effective to increase the electrical conductivity of n-(p-) type samples. Likewise, stress induced changes in the Seebeck coefficient, however, showing an improvement only in electron-doped films under compressive stress. Overall, the addition of elevated temperature to the bending experiments resulted in a decrease in the mechanical stability of the films. These trends did not produce a significant enhancement of the overall thermoelectric power factor, rather it was largely preserved in all cases.
Original language | English |
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Article number | 4085 |
Journal | Electronics |
Volume | 11 |
Issue number | 24 |
Early online date | 8 Dec 2022 |
DOIs | |
Publication status | Published - Dec 2022 |
Keywords
- annealing
- microcrystalline silicon
- power factor
- temperature
- thermoelectric
- thin films
- uniaxial stress
ASJC Scopus subject areas
- Control and Systems Engineering
- Signal Processing
- Hardware and Architecture
- Computer Networks and Communications
- Electrical and Electronic Engineering