Effect of aluminum doping on the structural and luminescent properties of ZnO nanoparticles synthesized by wet chemical method

R. Saravana Kumar; R. Sathyamoorthy; P. Sudhagar; P. Matheswaran; C. P. Hrudhya; Yong Soo Kang

doi:10.1016/j.physe.2011.01.022

Effect of aluminum doping on the structural and luminescent properties of ZnO nanoparticles synthesized by wet chemical method

R. Saravana Kumar, R. Sathyamoorthy^*, P. Sudhagar, P. Matheswaran, C. P. Hrudhya, Yong Soo Kang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The critical role that dopants play in semiconductor devices has stimulated research on the properties and the potential applications of semiconductor nanocrystals. Hence the investigation of the role of dopant concentration on the properties of semiconductor nanoparticles is very important from the viewpoints of basic physics as well as applications. In this context, in the present work Al-doped ZnO (AZO) nanoparticles were synthesized by simple wet chemical route. The structure and morphology of the nanoparticles analyzed using X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed hexagonal wurtzite structure with flower-like clusters consisting of multi-nanorods. Energy Dispersive Spectrum (EDS) confirms the substitution of Al into ZnO lattice. Defect analysis and excitonic effect of the nanoparticles were investigated by photoluminescence (PL) and UVVis absorption measurements, respectively. Optical absorption showed band gap broadening due to quantum confinement effect. PL measurements exhibited both near band edge (NBE) and deep level (DL) emissions. The effect of doping concentration on the growth, crystallization and defect distribution of AZO nanoparticles was studied.

Original language	English
Pages (from-to)	1166-1170
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	43
Issue number	6
DOIs	https://doi.org/10.1016/j.physe.2011.01.022
Publication status	Published - Apr 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Effect of aluminum doping on the structural and luminescent properties of ZnO nanoparticles synthesized by wet chemical method",

abstract = "The critical role that dopants play in semiconductor devices has stimulated research on the properties and the potential applications of semiconductor nanocrystals. Hence the investigation of the role of dopant concentration on the properties of semiconductor nanoparticles is very important from the viewpoints of basic physics as well as applications. In this context, in the present work Al-doped ZnO (AZO) nanoparticles were synthesized by simple wet chemical route. The structure and morphology of the nanoparticles analyzed using X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed hexagonal wurtzite structure with flower-like clusters consisting of multi-nanorods. Energy Dispersive Spectrum (EDS) confirms the substitution of Al into ZnO lattice. Defect analysis and excitonic effect of the nanoparticles were investigated by photoluminescence (PL) and UVVis absorption measurements, respectively. Optical absorption showed band gap broadening due to quantum confinement effect. PL measurements exhibited both near band edge (NBE) and deep level (DL) emissions. The effect of doping concentration on the growth, crystallization and defect distribution of AZO nanoparticles was studied.",

author = "Kumar, {R. Saravana} and R. Sathyamoorthy and P. Sudhagar and P. Matheswaran and Hrudhya, {C. P.} and Kang, {Yong Soo}",

note = "Funding Information: One of the authors R. Sathyamoorthy gratefully acknowledges Department of Science and Technology (DST), New Delhi, as this work was supported by DST/CMP-50 project. Two of the authors (P. Sudhagar and Yong Soo Kang) acknowledge Korea Science and Engineering Foundation for financial support granted through Nano R&D program ( 2007-02866 ) and Engineering Research Center program ( R11-2008-088-01001-0 ).",

year = "2011",

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doi = "10.1016/j.physe.2011.01.022",

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volume = "43",

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AU - Kumar, R. Saravana

AU - Sathyamoorthy, R.

AU - Sudhagar, P.

AU - Matheswaran, P.

AU - Hrudhya, C. P.

AU - Kang, Yong Soo

N1 - Funding Information: One of the authors R. Sathyamoorthy gratefully acknowledges Department of Science and Technology (DST), New Delhi, as this work was supported by DST/CMP-50 project. Two of the authors (P. Sudhagar and Yong Soo Kang) acknowledge Korea Science and Engineering Foundation for financial support granted through Nano R&D program ( 2007-02866 ) and Engineering Research Center program ( R11-2008-088-01001-0 ).

PY - 2011/4

Y1 - 2011/4

N2 - The critical role that dopants play in semiconductor devices has stimulated research on the properties and the potential applications of semiconductor nanocrystals. Hence the investigation of the role of dopant concentration on the properties of semiconductor nanoparticles is very important from the viewpoints of basic physics as well as applications. In this context, in the present work Al-doped ZnO (AZO) nanoparticles were synthesized by simple wet chemical route. The structure and morphology of the nanoparticles analyzed using X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed hexagonal wurtzite structure with flower-like clusters consisting of multi-nanorods. Energy Dispersive Spectrum (EDS) confirms the substitution of Al into ZnO lattice. Defect analysis and excitonic effect of the nanoparticles were investigated by photoluminescence (PL) and UVVis absorption measurements, respectively. Optical absorption showed band gap broadening due to quantum confinement effect. PL measurements exhibited both near band edge (NBE) and deep level (DL) emissions. The effect of doping concentration on the growth, crystallization and defect distribution of AZO nanoparticles was studied.

AB - The critical role that dopants play in semiconductor devices has stimulated research on the properties and the potential applications of semiconductor nanocrystals. Hence the investigation of the role of dopant concentration on the properties of semiconductor nanoparticles is very important from the viewpoints of basic physics as well as applications. In this context, in the present work Al-doped ZnO (AZO) nanoparticles were synthesized by simple wet chemical route. The structure and morphology of the nanoparticles analyzed using X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed hexagonal wurtzite structure with flower-like clusters consisting of multi-nanorods. Energy Dispersive Spectrum (EDS) confirms the substitution of Al into ZnO lattice. Defect analysis and excitonic effect of the nanoparticles were investigated by photoluminescence (PL) and UVVis absorption measurements, respectively. Optical absorption showed band gap broadening due to quantum confinement effect. PL measurements exhibited both near band edge (NBE) and deep level (DL) emissions. The effect of doping concentration on the growth, crystallization and defect distribution of AZO nanoparticles was studied.

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Effect of aluminum doping on the structural and luminescent properties of ZnO nanoparticles synthesized by wet chemical method

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