A brief review is presented of new photo-Hall studies of linear and nonlinear optical properties of narrow gap semiconductors with specific relevance to optical bistability. InSb is chosen as the prototype crystal for this work. The nonlinear refractive cross-section (s=?n/?N) is determined to be -1.1×10-18 cm3 near 5 µm at 77 K and -(2.3±1)×10-18 cm3 near 10 µm at 300 K. The two-photon absorption coefficients is found to be ß×7 cm MW-1. The results are in good agreement with theoretical prediction.
|Number of pages||9|
|Journal||Physica Status Solidi B - Basic Research|
|Publication status||Published - Dec 1988|
|Event||International Conference on Optical Nonlinearity and Bistability of Semiconductors - Berlin, Germany|
Duration: 22 Aug 1988 → 25 Aug 1988