Dynamical nonlinearity and bistability of narrow gap semiconductors

G. R. Allan, P. L. Chua, J. J. Hunter, H. A. MacKenzie, C. R. Pidgeon, A. C. Walker

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A brief review is presented of new photo-Hall studies of linear and nonlinear optical properties of narrow gap semiconductors with specific relevance to optical bistability. InSb is chosen as the prototype crystal for this work. The nonlinear refractive cross-section (s=?n/?N) is determined to be -1.1×10-18 cm3 near 5 µm at 77 K and -(2.3±1)×10-18 cm3 near 10 µm at 300 K. The two-photon absorption coefficients is found to be ß×7 cm MW-1. The results are in good agreement with theoretical prediction.

Original languageEnglish
Pages (from-to)719-727
Number of pages9
JournalPhysica Status Solidi B - Basic Research
Issue number2
Publication statusPublished - Dec 1988
EventInternational Conference on Optical Nonlinearity and Bistability of Semiconductors - Berlin, Germany
Duration: 22 Aug 198825 Aug 1988


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