DYNAMIC BEHAVIOR AND RESPONSE-TIME CONTROL OF TWO-PHOTON OPTICAL BISTABILITY IN INSB AT 10. 6 mu M WAVELENGTH.

Wei Ji; Ajoy K. Kar; Peter L. Chua; Andrew C. Walker

DYNAMIC BEHAVIOR AND RESPONSE-TIME CONTROL OF TWO-PHOTON OPTICAL BISTABILITY IN INSB AT 10. 6 mu M WAVELENGTH.

Wei Ji
, Ajoy K. Kar
, Peter L. Chua
, Andrew C. Walker

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

A time-dependent theory has been developed to model the behavior of doped-InSb, optically bistable etalons operating at room temperature and illuminated by a pulsed CO//2 laser. Good agreement is obtained between this semiempirical theory and experiment. The reduction of switching times to approximately 1 ns by n-type doping has been demonstrated experimentally.

Original language	English
Pages (from-to)	1986-1991
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	QE-23
Issue number	11
Publication status	Published - Nov 1987

Cite this

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title = "DYNAMIC BEHAVIOR AND RESPONSE-TIME CONTROL OF TWO-PHOTON OPTICAL BISTABILITY IN INSB AT 10. 6 mu M WAVELENGTH.",

abstract = "A time-dependent theory has been developed to model the behavior of doped-InSb, optically bistable etalons operating at room temperature and illuminated by a pulsed CO//2 laser. Good agreement is obtained between this semiempirical theory and experiment. The reduction of switching times to approximately 1 ns by n-type doping has been demonstrated experimentally.",

author = "Wei Ji and Kar, \{Ajoy K.\} and Chua, \{Peter L.\} and Walker, \{Andrew C.\}",

year = "1987",

month = nov,

language = "English",

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pages = "1986--1991",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "IEEE",

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T1 - DYNAMIC BEHAVIOR AND RESPONSE-TIME CONTROL OF TWO-PHOTON OPTICAL BISTABILITY IN INSB AT 10. 6 mu M WAVELENGTH.

AU - Ji, Wei

AU - Kar, Ajoy K.

AU - Chua, Peter L.

AU - Walker, Andrew C.

PY - 1987/11

Y1 - 1987/11

N2 - A time-dependent theory has been developed to model the behavior of doped-InSb, optically bistable etalons operating at room temperature and illuminated by a pulsed CO//2 laser. Good agreement is obtained between this semiempirical theory and experiment. The reduction of switching times to approximately 1 ns by n-type doping has been demonstrated experimentally.

AB - A time-dependent theory has been developed to model the behavior of doped-InSb, optically bistable etalons operating at room temperature and illuminated by a pulsed CO//2 laser. Good agreement is obtained between this semiempirical theory and experiment. The reduction of switching times to approximately 1 ns by n-type doping has been demonstrated experimentally.

UR - https://www.scopus.com/pages/publications/0023457014

M3 - Article

SN - 0018-9197

VL - QE-23

SP - 1986

EP - 1991

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 11

ER -

DYNAMIC BEHAVIOR AND RESPONSE-TIME CONTROL OF TWO-PHOTON OPTICAL BISTABILITY IN INSB AT 10. 6 mu M WAVELENGTH.

Abstract

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