Abstract
A time-dependent theory has been developed to model the behavior of doped-InSb, optically bistable etalons operating at room temperature and illuminated by a pulsed CO//2 laser. Good agreement is obtained between this semiempirical theory and experiment. The reduction of switching times to approximately 1 ns by n-type doping has been demonstrated experimentally.
Original language | English |
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Pages (from-to) | 1986-1991 |
Number of pages | 6 |
Journal | IEEE Journal of Quantum Electronics |
Volume | QE-23 |
Issue number | 11 |
Publication status | Published - Nov 1987 |