A time-dependent theory has been developed to model the behavior of doped-InSb, optically bistable etalons operating at room temperature and illuminated by a pulsed CO//2 laser. Good agreement is obtained between this semiempirical theory and experiment. The reduction of switching times to approximately 1 ns by n-type doping has been demonstrated experimentally.
|Number of pages||6|
|Journal||IEEE Journal of Quantum Electronics|
|Publication status||Published - Nov 1987|