Driving force for the WO3(0 0 1) surface relaxation

I. N. Yakovkin, M. Gutowski

Research output: Contribution to journalArticle

Abstract

The optimized structure of the WO3(0 0 1) surface with various types of termination ((1 × 1)O, (1 × 1)WO2, and c(2 × 2)O) has been simulated using density functional theory with the Perdew-Wang 91 gradient corrected exchange-correlation functional. While the energy of bulk WO3 depends weakly on the distortions and tilting of the WO6 octahedra, relaxation of the (0 0 1) surface results in a significant decrease of surface energy (from 10.2 × 10-2 eV/Å2 for the cubic ReO3-like, c(2 × 2)O-terminated surface to 2.2 × 10-2 eV/Å2 for the relaxed surface). This feature illustrates a potential role of surface relaxation in formation of crystalline nano-size clusters of WO3. The surface relaxation is accompanied by a dramatic redistribution of the density of states near the Fermi level, in particular a transformation of surface electronic states. This redistribution is responsible for the decrease of electronic energy and therefore is suggested to be the driving force for surface relaxation of the WO3(0 0 1) surface and, presumably, similar surfaces of other transition metal oxides. © 2007 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)1481-1488
Number of pages8
JournalSurface Science
Volume601
Issue number6
DOIs
Publication statusPublished - 15 Mar 2007

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electronics
surface energy
metal oxides
transition metals
density functional theory
gradients
energy

Keywords

  • Density functional calculations
  • Single crystal surfaces
  • Surface energy
  • Surface relaxation and reconstruction
  • Tungsten oxide

Cite this

Yakovkin, I. N. ; Gutowski, M. / Driving force for the WO3(0 0 1) surface relaxation. In: Surface Science. 2007 ; Vol. 601, No. 6. pp. 1481-1488.
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Driving force for the WO3(0 0 1) surface relaxation. / Yakovkin, I. N.; Gutowski, M.

In: Surface Science, Vol. 601, No. 6, 15.03.2007, p. 1481-1488.

Research output: Contribution to journalArticle

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