Double resonance study of hole burning in self-assembled quantum dots

D. G. Clarke, C. R. Pidgeon, J. P R Wells, I. V. Bradley, R. Murray, B. N. Murdin

Research output: Contribution to journalArticle

Abstract

We present far-infrared (FIR) modulated photoluminescence measurements of self-assembled InAs/GaAs quantum dots. The sample was annealed to remove any indium profile roughness from within the quantum dots and thus from the inhomogeneous broadening. The annealed sample shows resonant FIR excitations just as the unannealed sample, but exhibits spectral hole burning unlike the unannealed sample. The results indicate that indium roughness is one of the primary inhomogeneous broadening mechanisms in self-assembled quantum dots. © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)474-476
Number of pages3
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
Publication statusPublished - Mar 2002

Keywords

  • Inhomogeneous broadening
  • Intraband transitions
  • Quantum dots

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    Clarke, D. G., Pidgeon, C. R., Wells, J. P. R., Bradley, I. V., Murray, R., & Murdin, B. N. (2002). Double resonance study of hole burning in self-assembled quantum dots. Physica B: Condensed Matter, 314(1-4), 474-476. https://doi.org/10.1016/S0921-4526(01)01413-2