Abstract
Optoelectronic devices are important for laser modulators and Q-switches as well as in optical communication and network systems where all optical switching is required. In this paper we review the development of II-VI semiconductor devices fabricated by molecular beam epitaxy and based on the quantum confined Stark effect in p-i-n structures where the i-region is a set of quantum wells. In particular, we will discuss the characterisation of ZnSe/ZnCdSe/ZnSe devices.
| Original language | English |
|---|---|
| Pages (from-to) | 5-10 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 182-184 |
| Publication status | Published - 1995 |
| Event | Proceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria Duration: 26 Sept 1994 → 28 Sept 1994 |