Optoelectronic devices are important for laser modulators and Q-switches as well as in optical communication and network systems where all optical switching is required. In this paper we review the development of II-VI semiconductor devices fabricated by molecular beam epitaxy and based on the quantum confined Stark effect in p-i-n structures where the i-region is a set of quantum wells. In particular, we will discuss the characterisation of ZnSe/ZnCdSe/ZnSe devices.
|Number of pages
|Materials Science Forum
|Published - 1995
|Proceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria
Duration: 26 Sept 1994 → 28 Sept 1994