Doping of ZnSe and II-VI quantum structures

B. C. Cavenett; S. Y. Wang; K. A. Prior

Doping of ZnSe and II-VI quantum structures

B. C. Cavenett, S. Y. Wang, K. A. Prior

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Optoelectronic devices are important for laser modulators and Q-switches as well as in optical communication and network systems where all optical switching is required. In this paper we review the development of II-VI semiconductor devices fabricated by molecular beam epitaxy and based on the quantum confined Stark effect in p-i-n structures where the i-region is a set of quantum wells. In particular, we will discuss the characterisation of ZnSe/ZnCdSe/ZnSe devices.

Original language	English
Pages (from-to)	5-10
Number of pages	6
Journal	Materials Science Forum
Volume	182-184
Publication status	Published - 1995
Event	Proceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria Duration: 26 Sept 1994 → 28 Sept 1994

Cite this

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title = "Doping of ZnSe and II-VI quantum structures",

abstract = "Optoelectronic devices are important for laser modulators and Q-switches as well as in optical communication and network systems where all optical switching is required. In this paper we review the development of II-VI semiconductor devices fabricated by molecular beam epitaxy and based on the quantum confined Stark effect in p-i-n structures where the i-region is a set of quantum wells. In particular, we will discuss the characterisation of ZnSe/ZnCdSe/ZnSe devices.",

author = "Cavenett, {B. C.} and Wang, {S. Y.} and Prior, {K. A.}",

year = "1995",

language = "English",

volume = "182-184",

pages = "5--10",

journal = "Materials Science Forum",

issn = "1662-9752",

publisher = "Trans Tech Publications",

note = "Proceedings of the 3rd European Workshop on II-VI Compounds ; Conference date: 26-09-1994 Through 28-09-1994",

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TY - JOUR

T1 - Doping of ZnSe and II-VI quantum structures

AU - Cavenett, B. C.

AU - Wang, S. Y.

AU - Prior, K. A.

PY - 1995

Y1 - 1995

N2 - Optoelectronic devices are important for laser modulators and Q-switches as well as in optical communication and network systems where all optical switching is required. In this paper we review the development of II-VI semiconductor devices fabricated by molecular beam epitaxy and based on the quantum confined Stark effect in p-i-n structures where the i-region is a set of quantum wells. In particular, we will discuss the characterisation of ZnSe/ZnCdSe/ZnSe devices.

AB - Optoelectronic devices are important for laser modulators and Q-switches as well as in optical communication and network systems where all optical switching is required. In this paper we review the development of II-VI semiconductor devices fabricated by molecular beam epitaxy and based on the quantum confined Stark effect in p-i-n structures where the i-region is a set of quantum wells. In particular, we will discuss the characterisation of ZnSe/ZnCdSe/ZnSe devices.

UR - http://www.scopus.com/inward/record.url?scp=0029228029&partnerID=8YFLogxK

M3 - Article

SN - 1662-9752

VL - 182-184

SP - 5

EP - 10

JO - Materials Science Forum

JF - Materials Science Forum

T2 - Proceedings of the 3rd European Workshop on II-VI Compounds

Y2 - 26 September 1994 through 28 September 1994

ER -

Doping of ZnSe and II-VI quantum structures

Abstract

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