Doping of ZnSe and II-VI quantum structures

B. C. Cavenett, S. Y. Wang, K. A. Prior

Research output: Contribution to journalArticle

Abstract

Optoelectronic devices are important for laser modulators and Q-switches as well as in optical communication and network systems where all optical switching is required. In this paper we review the development of II-VI semiconductor devices fabricated by molecular beam epitaxy and based on the quantum confined Stark effect in p-i-n structures where the i-region is a set of quantum wells. In particular, we will discuss the characterisation of ZnSe/ZnCdSe/ZnSe devices.

Original languageEnglish
Pages (from-to)5-10
Number of pages6
JournalMaterials Science Forum
Volume182-184
Publication statusPublished - 1995
EventProceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria
Duration: 26 Sep 199428 Sep 1994

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    Cavenett, B. C., Wang, S. Y., & Prior, K. A. (1995). Doping of ZnSe and II-VI quantum structures. Materials Science Forum, 182-184, 5-10.